Cryogenic Power Electronics

Award Information
Agency:
Department of Defense
Branch
Office of the Secretary of Defense
Amount:
$100,000.00
Award Year:
2005
Program:
SBIR
Phase:
Phase I
Contract:
N00014-05-M-0053
Award Id:
76485
Agency Tracking Number:
O043-EP4-4128
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
5445 Conestoga Court, #2A, Boulder, CO, 80301
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
933677452
Principal Investigator:
Ben Nguyenphu
Principal Investigator
(407) 210-2113
bennp@techapps.com
Business Contact:
Fred Fusilier
Business Manager
(303) 443-2262
ffusilier@techapps.com
Research Institution:
n/a
Abstract
High temperature superconductor (HTS) materials are being used in high-performance propulsion systems for naval ships, as well as power cables, motors, and generators. These systems require the use of power electronics to provide the power for the control systems. Power electronic systems contain digital and analog circuits, and the increasing complexity of power electronic systems required for deep space missions and naval electric-powered propulsion requires a new approach in material and processes to operate efficiently at cryogenic temperatures. The n-type metal oxide semiconductor field effect transistor (n-MOSFET) is the building block for both digital and analog circuits. Silicon (Si) is a good material for fabricating power MOSFET and electronic devices for operation from 300 K down to 77 K. Devices made from Si suffer from carrier freeze-out below 77 K. Silicon carbide (SiC) is another material suitable for power switch transistors; however, SiC devices suffer from carrier freeze-out at temperatures higher that that of Si. Technology Applications, Inc. (TAI) proposes to develop a dc-dc converter power module for a power system with the incorporation of HTS thin films for the passive and active elements. We propose the use of a SiGe heterostructure metal oxide semiconductor modulation doped field effect transistor (MOS-MODFET) as the active device in our dc-dc converter power module development.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government