PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH FLASHOVER SUPPRESSION

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$499,864.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
10834
Agency Tracking Number:
10834
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
4905 Hawkins St Ne, Albuquerque, NM, 87109
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr Juan M Elizondo
Principal Investigator
(505) 345-8923
Business Contact:
() -
Research Institute:
n/a
Abstract
PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (PCSSS) PRESENTLY HAVE THE GREATEST POTENTIAL FOR DRAMATIC PERFORMANCE ENHANCEMENTS FOR HIGH POWER PULSED APPLICATIONS. HOWEVER, SURFACE FLASHOVER SEVERELY LIMITS THE MAXIMUM VOLTAGE THEY CAN STAND OFF IN THE OPEN STATE. APPLICATION OF A PROPRIETARY TECHNIQUE TO PCSS CAN OVERCOME THIS LIMITATION. THE TECHNIQUE HAS THE POTENTIAL TO INCREASE BREAKDOWN LASER TRIGGER POWER REQUIREMENTS BY A FACTOR OF 25. THE PROPRIETARY TECHNIQUE HAS DEMONSTRATED FIVEFOLD IMPROVEMENT OVER CONVENTIONAL VACUUM INSULATORS FOR PULSED POWER APPLICATIONS. IN PHASE I CONCEPT FEASIBILITY WILL BE STUDIED BY MEASURING THE IMPROVEMENT IN PCSS "DARK" STANDOFFVOLTAGE IN A HIGH VOLTAGE BREAKDOWN TEST FACILITY.

* information listed above is at the time of submission.

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