NHanced Semiconductors, Inc

Address

1415 Bond St
#155
Naperville, IL, 60563

http://www.nhanced-semi.com

Information

DUNS: 080307250
# of Employees: 11

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. Development of Designs, Processes and Technology for 200mm Silicon Sensors

    Amount: $999,961.00

    Siliconbased detectors are central to all modern particle physics collider experiments. The functional area of these systems has increased from a few square centimeters in the mid80s to 200 square met ...

    SBIRPhase II2016Department of Energy
  2. 64MB+ Radiation-Hardened, Non-Volatile Memory for Space

    Amount: $749,838.00

    ABSTRACT:In Phase II Tezzaron will design a 2 layer 8Mb ReRAM (RRAM) memory device, extendable to 17 layers or 128Gb as a test chip or 1Gb as a final device. The first layer of the design is a control ...

    SBIRPhase II2015Department of Defense
  3. Development of Designs, Processes and Technology for 200mm Silicon Sensors

    Amount: $149,777.00

    Silicon-based detectors are central to all modern particle physics collider experiments. The functional area of these systems has increased from a few square centimeters in the mid-80s to 200 square m ...

    SBIRPhase I2015Department of Energy
  4. Next Generation Rad Hard Reduced Instruction Set Computer

    Amount: $149,611.00

    ABSTRACT: Tezzaron proposes to create a microprocessor device based on an ARM M0 processor designed to be fabricated in the Honeywell S150 Rad-Hard SOI semiconductor process. The device will be desig ...

    SBIRPhase I2014Air Force Department of Defense
  5. 64MB+ Radiation-Hardened, Non-Volatile Memory for Space

    Amount: $149,257.00

    ABSTRACT: ReRAM has made significant progress over the last few years and is ready for development by early adopters. Tezzaron proposes to create a multilayer 3D assembled ReRAM memory device using R ...

    SBIRPhase I2014Department of Defense Air Force
  6. Radiation-Hardened, Resistive Random Access Memory

    Amount: $749,919.00

    ABSTRACT: Tezzaron proposes to develop and demonstrate a 64Mb 3D integrated MRAM device comprising one non-volatile memory cell layer and one radiation hardened I/O logic and control layer. This memo ...

    SBIRPhase II2012Department of Defense Air Force
  7. Radiation-Hardened, Resistive Random Access Memory

    Amount: $99,997.00

    ABSTRACT: Tezzaron intends to develop a nonvolatile low latency memory based on 3D assembly of RRAM memory cell wafers with CMOS logic wafers. The very high density 3D interconnect that Tezzaron can ...

    SBIRPhase I2011Department of Defense Air Force
  8. 3-D Space Qualifiable Field Programmable Gate Array

    Amount: $100,000.00

    Tezzaron proposes to use its 3D wafer stacking technology to produce a true 3 dimensional fabric of programmable logic. A benefit of 3D integration is the fundamental increase in interconnect. FPGAs b ...

    SBIRPhase I2009Air Force Department of Defense
  9. Ultra-Dense Three-Dimensional Electronics for Space

    Amount: $1,579,930.00

    Chip-to-chip I/O has become a serious bottleneck, especially in communications between high-speed processors and their memory devices. Integrating a large amount of memory and a powerful processor int ...

    SBIRPhase II2009Air Force Department of Defense
  10. Design and Fabrication Techniques for 3-Dimensional Integrated Circuits

    Amount: $98,955.00

    Tezzaron proposes to use and extend its 3D wafer stacking technology to produce a 8Gb DRAM. The device will be made from 8 layers of memory and a single logic control layer, providing density far beyo ...

    SBIRPhase I2009Defense Advanced Research Projects Agency Department of Defense

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