TLC Precision Wafer Technology, Inc.

Company Information

Company Name
TLC Precision Wafer Technology, Inc.
1411 West River Road, North
Minneapolis, MN, 55411-3436
1 612-341-2795
Company Website
Number of Employees
Hubzone Owned:
Minority Owned:
Woman Owned:

Award Totals

SBIR Phase I

Award List

  1. High Power Wide Bandgap Engineered MMW MMIC Transceiver

    Amount: $100,000.00

    During this phase I SBIR effort unique proven lattice and bandgap engineering techniques will be utilized to epitaxially grow InAlAs / InGaAs on GaN substrate for the design and fabrication of high po ...

    SBIR Phase I 2010 National Aeronautics and Space Administration
  2. X-Band to W-Band Doppler Radar Using Reconfigurable RF T/R MMIC Series

    Amount: $635,999.00

    TLC demonstrated a high performance remote Doppler Radar adjustable X-band to W-band transceiver chip that can perform well as a FMCW, super-heterodyne or pulse radar that meets space qualification sp ...

    SBIR Phase II 2010 National Aeronautics and Space Administration
  3. High Efficiency Optical Detection at 1300nm to 1500nm on GaAs Substrates Using Pseudomorphic InGaAs

    Amount: $60,000.00

    Pseudomorphic InGaAs with high InAs concentrations on GaAs substrates are currently in use in complementary-heterostructure FET (C-HFET) digital and MODFET MMW circuits. While their bandgaps enable th ...

    SBIR Phase I 1994 Air ForceDepartment of Defense
  4. Millimeter Wave Power Generation with Quasi-Optical Power Combining Arrays

    Amount: $98,675.00

    A promising new approach for high power solid-state sources will be demonstrated using spatial power combining grids. Present development of high power field effect transistor (FET) based solid-state ...

    SBIR Phase I 1994 Defense Advanced Research Projects AgencyDepartment of Defense
  5. Epitaxially Grown, Germanium, Junction Field-Effect Transistor for Cryogenic Detectors

    Amount: $70,000.00

    An epitaxial grown Germanium - channel Junction Field Effect Transistor (Ge-JFET) is proposed to provide the most efficient, low noise cryogenically cooled detectors operating at 2 - 4¿K. Precision ...

    SBIR Phase I 1994 National Aeronautics and Space Administration
  6. Advanced CHFET with GaN Insulator

    Amount: $80,000.00

    TLC Precision Wafer Technology, Inc. (TLC) has a very aggressive plan for becoming a leading manufacturer and supplier of epitaxial GaAs and InP-based wafers for military and commercial applications. ...

    SBIR Phase I 1995 Air ForceDepartment of Defense
  7. Low Phase Noise Millimeter Wave Source

    Amount: $100,000.00

    Compact, low-cost, low-phase noise oscillators play an important role in C3 applications; such as satellite communications, intelligent vehicle highway systems (IVHS), data links for robotics co ...

    SBIR Phase I 1996 Air ForceDepartment of Defense
  8. MBE Growth and Characterization of Radiation Hardened PHEMT Devices

    Amount: $60,000.00

    As the complexity of semiconductor integrated circuits increases and the power supply is scaled to lower voltages, the problems associated with radiation hardening reliability and testability are exac ...

    SBIR Phase I 1996 Missile Defense AgencyDepartment of Defense
  9. Low Cost 3" 1nP Based HEMTs for Advanced Millimeter Wave Monolithic Integrated Circuit Applications

    Amount: $100,000.00

    To meet the future needs for increased capabilities in military as well as commercial space communications and radar applications, the W-Band (94 Ghz) frequency spectrum utilized. A critical issue has ...

    SBIR Phase I 1994 Defense Advanced Research Projects AgencyDepartment of Defense
  10. Low Cost Ka-Band Transmit/Recieve (T/R) module

    Amount: $100,000.00

    The technical problem to be addressed is that of designing a transmit/recieve module based on a basic GaAs MMIC chip set. Emphasis will be placed on simplicity toward the goal of a low-cost product. ...

    SBIR Phase I 1998 ArmyDepartment of Defense

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