Epitaxially Grown, Germanium, Junction Field-Effect Transistor for Cryogenic Detectors

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: N/A
Agency Tracking Number: 22786
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1994
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
661 5th Avenue North, Suite, 160, Minneapolis, MN, 55405
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Timothy T. Childs
 (612) 341-2795
Business Contact
Phone: () -
Research Institution
N/A
Abstract
An epitaxial grown Germanium - channel Junction Field Effect Transistor (Ge-JFET) is proposed to provide the most efficient, low noise cryogenically cooled detectors operating at 2 - 4¿K. Precisioned engineered lattice and doping epitaxial growth will eliminate material defects to allow the Germanium superior low temperature mobilities to be utilized in the most efficient cryogenic temperature transistors technology available (JFETs). The low resistance Al/Pd contacts on the engineered p-n-p structure will result in Ge-channel JFET detectors with very low noise at audio frequencies (lOHz), high input impedance and low power dissipation. TLC expect to demonstrate Ge-JFETs with less than l0nV of noise at lOOHz and 4¿K. This proposal summarizes how TLC will develop and demonstrate the material, fabrication and performance advantages of epitaxial grown Ge-JFETs for cryogenically cooled detector for

* Information listed above is at the time of submission. *

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