Epitaxially Grown, Germanium, Junction Field-Effect Transistor for Cryogenic Detectors

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$70,000.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
22786
Agency Tracking Number:
22786
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
661 5th Avenue North, Suite, 160, Minneapolis, MN, 55405
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Timothy T. Childs
(612) 341-2795
Business Contact:
() -
Research Institute:
n/a
Abstract
An epitaxial grown Germanium - channel Junction Field Effect Transistor (Ge-JFET) is proposed to provide the most efficient, low noise cryogenically cooled detectors operating at 2 - 4¿K. Precisioned engineered lattice and doping epitaxial growth will eliminate material defects to allow the Germanium superior low temperature mobilities to be utilized in the most efficient cryogenic temperature transistors technology available (JFETs). The low resistance Al/Pd contacts on the engineered p-n-p structure will result in Ge-channel JFET detectors with very low noise at audio frequencies (lOHz), high input impedance and low power dissipation. TLC expect to demonstrate Ge-JFETs with less than l0nV of noise at lOOHz and 4¿K. This proposal summarizes how TLC will develop and demonstrate the material, fabrication and performance advantages of epitaxial grown Ge-JFETs for cryogenically cooled detector for

* information listed above is at the time of submission.

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