Low Cost 3" 1nP Based HEMTs for Advanced Millimeter Wave Monolithic Integrated Circuit Applications

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$100,000.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
26439
Agency Tracking Number:
26439
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
661 5th Avenue North #160, Minneapolis, MN, 55405
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Timothy Childs
(612) 341-2795
Business Contact:
() -
Research Institution:
n/a
Abstract
To meet the future needs for increased capabilities in military as well as commercial space communications and radar applications, the W-Band (94 Ghz) frequency spectrum utilized. A critical issue has arisen in the development of the future W-band electronic systems technology: while InP-based materials and transistors are known to be the highest performance technology for W-band small signal and low-noise applications, they have not been able to be made commercially because InP material growth is at an embryonic stage of development and established sources of large diameter InP wafers are not yet available. Furthermore in power applications InP-based devices and circuits are limited by some key materials deficiencies. In particular, the "Kink effect", incomplete HFET pinch off at high drain voltages and low HFET breakdown. We plan to develop a technology for growing high IiiAs mole fraction InGaAs quantum well channel heterostructure field effect transistors (HFETS) with InAlAs barriers on 3" InP substrates for MMW devices and monolithic format integrated circuits. Structured layers- InGaAs channels, InAlAs barriers, will be grown lattice matched to or psuedomorphically on InP substrates, by engineering the lattice constant to that of InP (5.87A). Anticipated Benefits/Potential Applications - Using this approach, TLC Precision Wafer Technology will provide a steady source of material for the fabrication of MMIC's for the future W-band electronic systems on 3" InP substrates instead of 2" InP substrates.

* information listed above is at the time of submission.

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