THE REPRODUCIBLE FORMATION OF HIGH RELIABILITY OHMIC CONTACT IN A NTYPE GAAS IS A MAJOR PROBLEM IN THE GAAS BASED ELECTRONIC DEVICE TECHNOLOGY.

Award Information
Agency:
Department of Defense
Amount:
$63,061.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Air Force
Award Year:
1984
Phase:
Phase I
Agency Tracking Number:
1083
Solicitation Topic Code:
N/A
Small Business Information
Universal Energy Systems Inc.
4401 Dayton-xenia Road, Dayton, OH, 45432
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 RABI BHATTACHARYA
 (513) 426-6900
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE REPRODUCIBLE FORMATION OF HIGH RELIABILITY OHMIC CONTACT IN A NTYPE GAAS IS A MAJOR PROBLEM IN THE GAAS BASED ELECTRONIC DEVICE TECHNOLOGY. STANDARD TECHNOLOGY UTILIZES FURNANCE ANNEALING OF AUGE EUTECTIC COMPOSITION WITH AN OVERLAYER OF NI AT TEMPERATURES IN THE RANGE OF 400-450 DEGREE C. THIS TECHNIQUE, ALTHOUGH IT WORKS, IS NOT VERY RELIABLE. BESIDES, THERE IS A NEED IN THE INDUSTRY TO DEVELOP A TECHNIQUE THAT WILL ALLOW THE FABRICATION OF OHMIC CONTACT AT LOW TEMPERATURE. ION BEAM MIXING IS AN ATTRACTIVE ALTERNATIVE TO THERMAL ALLLOYING. SO FAR, NO ONE HAS APPLIED THE ION BEAM MIXING TECHNIQUE TO FABRICATE OHMIC CONTACT TO N-TYPE GAAS. A PROPOSAL IS MADE HEREIN TO INVESTIGATE THE USE OF ION BEAM MIXING AS A TECHNIQUE FOR FORMING OHMIC CONTACT ON N-TYPE GAAS. THE BEST COMBINATION OF ION IMPLANTATION PARAMETERS SUCH AS ENERGY, MASS AND DOSE FOR OBTAINING MIXED LAYERS AT THE INTERFACE WILL BE DETERMINED. THE CONTACT RESISTIVITIES OF THE MIXED LAYERS WILL BE MEASURED BEFORE AND AFTER ANEALING AT LOW TEMPERATURES.

* information listed above is at the time of submission.

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