SILICON DOPED GALLIUM BY ION IMPLANTATION FOR IMPURITY BAND CONDUCTION DETECTORS

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 1080
Amount: $497,293.00
Phase: Phase II
Program: SBIR
Awards Year: 1985
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
4401 Dayton-xenia Road, Dayton, OH, 45432
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 John A. Baker
 (513) 426-6900
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THIS GOAL OF THIS RESEARCH PROGRAM WILL BE THE PRODUCTION OF HEAVILY DOPED GALLIUM IN SILICON (GREATER THAN 4 X 10 ATOMS/CM ) BY ION IMPLANTATION. THE PRODUCT WILL BE ANALYZED TO DETERMINE THE CHARACTERISTICS OF IMPURITY BAND CONDUCTION AS IT APPLIES TO THE DE VELOPMENT OF A THIN (4 MICRONS) INFRARED DETECTOR. THE UES TANDETRON ION BEAM ACCELERATOR WILL BE EMPLOYED TO IMPLANT GALLIUM INTO SILICON USING SEVERAL BEAM ENERGY VALUES RANGING FROM 400 KEV TO 6 MEV, PRODUCING A UNIFORM DISTRIBUTION OF GALLIUM OVER THE FIRST 4 MICRONS. ANNEALING OF THE SILICON SURFACE TO A DEPTH SLIGHTLY GREATER THAN THE DAMAGE REGION WILL BE PREFORMED USING PULSED LASER AND INCOHERENT LIGHT OR RESISTIVE HEATING. THE RECRYSTALLIZING SOLID WILL PLACE THE GALLIUM ATOMS IN SUBSTITUTIONAL SITES AND WILL PROMOTE SINGLE CYRSTAL RECRYSTALLIZATION OF THE DAMAGED SILICON. RBS, SPREADING RESISTANCE, DLTS, HALL AND PHOTOCONDUCTIVITY EQUIPMENT WILL MEASURE DEPTH DISTRIBUTION, ANALYZE GALLIUM UNIFORMITY,DETECT IONIZED IMPURITIES AND DEFECTS, MEASURE ELECTRICAL CHARACTERISTICS OF IMPURITY BAND CON DUCTION, AND PROVIDE INFORMATION CONCERNING PHOTOCONDUCTIVITY. THE LONGER TERM GOAL OF UNDERSTANDING FTHE PHYSICAL LAWS GOVERNING THE NATURE OF IBC WILL COME FROM DATA OBTAINED FROM FUTURE STUDIES.

* Information listed above is at the time of submission. *

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