TECHNIQUE TO CHARACTERIZE THE INTERFACES PRESENT IN SEMICONDUCTOR SUPERLATTICES

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$102,000.00
Award Year:
1986
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
2100
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Universal Energy Systems Inc.
4401 Dayton-xenia Rd, Dayton, OH, 45432
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
A K Rai
(513) 426-6900
Business Contact:
() -
Research Institution:
n/a
Abstract
THE ELECTRONIC AND OPTICAL PROPERTIES OF DEVICES BASED ON SEMICONDUCTOR SUPERLATTICES ARE FOUND TO BE SENSITIVE TO THE ATOMIC ARRANGEMENT AT OR NEAR THE INTERFACE OF THE COMPOSITIONAL MODULATION. THE EXAMINATION OF THE MATERIAL STATE OF THESE INTERFACES IS THEREFORE AN ESSENTIAL TASK. WE PROPOSE TO APPLY TRANSMISSION ELECTRON MICROSCOPY (TEM) TO THIS PROBLEM. WITH THIS TECHNIQUE, IT IS POSSIBLE TO STUDY THE NATURE OF THE DEFECTS PRESENT AT THE INTERFACE. IN ADDITION, THE ELECTRON MICROSCOPE CAN BE OPERATED UNDER A HIGH RESOLUTION SCALE WHEREBY PHASE CONTRAST MICROSCOPY CAN BE USED TO STUDY INTERFACE ON A MICROSCOPIC SCALE (APPROX 3A). AN ESSENTIAL PART OF ANY ELECTRON MICROSCOPIC STUDY IS THE PREPARATION OF THIN SPECIMENS. IN PHASE I ACTIVITIES WILL BE DIRECTED AT DEVELOPING TECHNIQUES FOR MAKING TWO DIFFERENT TYPES OF SPECIMEN, NAMELY (A) PLAN VIEW AND (B) CROSS(X)SECTIONAL VIEW SAMPLES. IN THE PLAN VIEW CASE IT IS POSSIBLE TO SEE THE CHARACTERISTICS OF THE TOP LAYER OF A DEVICE, WHEREAS WITH THE X-SECTIONAL TECHNIQUES IT WOULD BE POSSIBLE TO SEE THE INTERFACE DIRECTLY. ATTEMPTS WILL BE MADE IN PHASE I TO STUDY INTERFACES WITH HIGH RESOLUTION PHASE CONTRAST ELECTRON MICROSCOPY. THE MATERIAL CHARACTERISTICS OF INTERFACE CAN THEN BE RELATED TO THE ELECTRONIC AND OPTICAL PROPERTIES OF DEVICES.

* information listed above is at the time of submission.

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