LOW COST HIGH RESISTIVITY FLOAT-ZONE SILICON DIODES

Award Information
Agency: Department of Energy
Branch: N/A
Contract: N/A
Agency Tracking Number: 7759
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1988
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Universal Energy Systems Inc
4401 Dayton-xenia Road, Dayton, OH, 45432
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 JOHN A BAKER
 () -
Business Contact
 Larry E Clay
Phone: (513) 426-6900
Research Institution
N/A
Abstract
HIGH RESISTIVITY SINGLE CRYSTAL SILICON IS NECESSARY FOR THE PRODUCTION OF LARGE-AREA SILICON DIODES. UNIFORMITY OF DOPANTS IN THE X, Y, AND Z DIRECTIONS OF THE DIODE IS IMPORTANT FOR THE DEVELOPMENT OF SENSITIVE AND STANDARDIZED DIODES. MULTIPASS FLOAT ZONING IN VACUUM OF HIGH PURITY POLYCRYSTALLINE SILICON WILL REMOVE N-TYPE DOPANT ELEMENTS AND METALLIC IMPURITIES, AND PRODUCE HIGH RESISTIVITY (HIGH PURITY) SILICON. A LAST ZONE PASS IN ARGON GAS WILL BE USED TO PRODUCE DISLOCATION-FREE SINGLE CRYSTAL SILICON WITH THE DESIRED HIGH RESISTIVITY AND UNIFORMITY NECESSARY FOR THE PRODUCTION OF THE SILICON DIODES REQUIRED FOR EXPERIMENTS PERFORMED ON THE SUPERCONDUCTING SUPER COLLIDER. THE KEY FACTORS NECESSARY TO ACHIEVE THE GOAL OF THIS PROJECT ARE HIGH PURITY STARTING MATERIAL (POLYCRYSTALLINE SILICON), GREAT CONCERN FOR CLEANLINESS, AND EXPERIENCE IN PRODUCING HIGH RESISTIVITY SINGLE CRYSTAL SILICON. A COST OF LESS THAN $10/GRAM SHOULD RESULT FROM THIS RESEARCH.

* information listed above is at the time of submission.

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