RADIATION REPONSE OF EPI-LESS BOND ETCH SILICON-ON-INSULATOR FABRICATED WITH MEV ION IMPLANTATION

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$250,000.00
Award Year:
1992
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
15723
Agency Tracking Number:
15723
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
4401 Dayton-xenia Road, Dayton, OH, 45432
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Perter P Pronko
Principal Investigator
(513) 426-6900
Business Contact:
() -
Research Institution:
n/a
Abstract
EPI-LESS BOND ETCH SILICON-ON-INSULATOR (EL-BESOI) USING MEV ION IMPLANTATION IS A NEW APPROACH TO FABRICATING HIGH QUALITY SOI PARTICULARLY FOR VERY THIN SOI (100-300 NM) AS REQUIRED FOR USE IN HIGH SPEED, FULLY DEPLETED, CMOS DEVICE STRUCTURES. AND THE RADIATION RESPONSE OF SUCH SOI MATERIAL IS A CONTINUING CONCERN FOR RADIATION ENVIRONMENTS SUCH AS SPACE, REACTORS, OR NUCLEAR BURSTS. BONDED SOI MATERIAL IS UNIQUE IN THAT THE OXIDE CAN BE CUSTOM DESIGNED OR MODIFIED DURING FABRICATION FOR A DEGREE OF CONTROL OF RADIATION HARDNESS PROPERTIES. THIS PROGRAM WILL STUDY SUCH OXIDE FABRICATION TECHNIQUES AND EVALUATE THEM FOR RADIATION RESPONSE UNDER INTENSE X-RAY, ELECTRON, AND PROTON BOMBARDMENT. ADDITIONALLY, OPTIMIZATION OF THE MEV EL-BESOI MANUFACTURING PROCESS WILL ALSO BE PURSUED FOR 3" AND 4" WAFERS.

* information listed above is at the time of submission.

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