SiC Dielectric Capacitor

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 19614
Amount: $75,292.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Ues, Inc.
4401 Dayton-xenia Road, Dayton, OH, 45432
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Bang-hung Tsao
 (513) 253-3986
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE PROPOSED RESEARCH ATTEMPTS TO DEVELOP AN ADVANCED CAPACITOR USING SiC FOR HIGH TEMPERATURE (400 0C), HIGH POWER, AND HIGH DENSITY ELECTRONIC COMPONENTS FOR AIRCRAFT OR AEROSPACE APPLICATION. THE CONVENTIONAL CAPACITOR CONSISTS OF A LARGE NUMBER OF METALLIZED POLYSULFONE FILM CAPACITORS IN PARALLEL ENCLOSED IN A HERMETICALLY SEALED METAL CASE. PROBLEMS WITH ELECTRICAL FAILURE THERMAL FAILURE AND DIELECTRICAL FLOWS WERE EXPERIENCED BY AIR FORCE SUPPLIERS OF THE COMPONENT AND SUBSYSTEM. THE HIGH BREAKDOWN ELECTRICAL FIELD, HIGH THERMAL CONDUCTIVITY, AND HIGH TEMPERATURE OPERATIONAL RESISTANCE OF SiC COMPARED TO THE CONVENTIONAL POLYMER AND CERAMIC CAPACITOR WOULD MAKE IT A BETTER CHOICE FOR THE HIGH TEMPERATURE, HIGH POWER CAPACITOR. THE PROTOTYPICAL CAPACITOR WILL BE FABRICATED USING SiC. THE QUALITY OF THE DIELECTRICAL FILM WILL BE EVALUATED. THE ELECTRICAL PARAMETERS, SUCH AS THE CAPACITANCE DISSIPATION FACTOR EQUIVALENT SERIES RESISTANCE, AND DIELECTRIC WITHSTAND VOLTAGE WILL BE EVALUATED. POSSIBLE FAILURE MECHANISM WILL ALSO BE INVESTIGATED AND SUITABLE REMEDIES EVALUATED.

* information listed above is at the time of submission.

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