Development of Ion Beam Techniques for Layer Splitting of Oxide Materials

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-03ER83809
Agency Tracking Number: 70277S02-II
Amount: $0.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Ues, Inc.
4401 Dayton-Xenia Road, Dayton, OH, 45432
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Rabi Bhattacharya
 (937) 426-6900
Business Contact
 Francis Williams, Jr.
Phone: (937) 426-6900
Research Institution
70277S02-II Micro- and optoelectronics, and micro-electro-mechanical systems (MEMS) integration often requires placing thin layers of different materials on a substrate or self-supporting thin layer. This cannot always be achieved by standard thin film deposition processes such as sputtering or pulsed laser deposition because of limitations due to lattice mismatch, interdiffusion, and/or interfacial chemical reaction. This project will develop ion beam techniques for layer splitting and transfer onto a desired substrate for device applications. In Phase I, LiNbO3 and PbZn1/3Nb2/3O3 ¿ PbTiO3 (PZN-PT) layers were separated by implanting MeV He and H ions and either chemical etching or rapid thermal annealing. The mechanism of layer separation was studied using optical and transmission electron microscopic techniques. A monomorph piezo-actuator based on separated PZN-PT film was fabricated and evaluated. Phase II will: (1) optimize the parameters for efficient and cost-effective layer separation of LiNbO3, PZN-PT and PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT), (2) understand the mechanism of layer separation of metal-oxides, (3) develop techniques for bonding the separated layers on silicon and other substrates, and (4) fabricate devices. Commercial Applications and Other Benefits as described by awardee: The technology should enable the integration of photonic circuits and microelectromechanical systems (MEMS) with various devices and materials. New systems applications would take advantage of the chip-level integration of electronic, photonic, and MEMS with integrated multiple functions.

* information listed above is at the time of submission.

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