Development of Long Length High Ic Thick YBCO Films Through MOD Process with Pinning Center Enhancement

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$374,993.00
Award Year:
2005
Program:
SBIR
Phase:
Phase II
Contract:
FA8650-05-C-2627
Agency Tracking Number:
O043-EP6-1008
Solicitation Year:
2004
Solicitation Topic Code:
OSD04-EP6
Solicitation Number:
2004.3
Small Business Information
UES, INC.
4401 Dayton-Xenia Road, Dayton, OH, 45432
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
074689217
Principal Investigator:
Yongli Xu
Research Scientist
(937) 426-6900
yxu@ues.com
Business Contact:
Francis Williams, Jr.
Contracts Manager
(937) 426-6900
fwilliams@ues.com
Research Institution:
n/a
Abstract
YBCO film through MOD approach is one of the most cost effective methods for long length CC fabrications. Although, this process has shown success on films below 1 micron, thicker films with the performance goal of 500-1000 A/cm have not been demonstrated even on small samples. Hence, long length thicker films of 1-3 micron through MOD approach with pinning center enhancement are yet to be fully developed to attain higher Ic and Je. High-density nanoscale pinning centers is the only way to keep Jc from dramatic degradation for thick films. In Phase I the feasibility of Ic>286A/cm and Jc>2.4 MA/cm2 for 1.2 micron YBCO films has been demonstrated. In Phase II, we propose to further increase the Ic limit and scale-up thicker film fabrication process. The major tasks will include: (1) optimization of MOD process steps on short lengths of RABiTS, IBAD and ISD substrates with appropriate buffers for thicker YBCO films (>2 micron) with high density nano pinning centers, and (2) scale-up of the optimized process to longer (>1 meter) tapes. UES has teamed up with Oxford Instruments for RABiTS and Los Alamos National Laboratory for IBAD substrates for the Phase II research.

* information listed above is at the time of submission.

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