Development of Long Length High Ic Thick YBCO Films Through MOD Process with Pinning Center Enhancement
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4401 Dayton-Xenia Road, Dayton, OH, 45432
Francis Williams, Jr.
AbstractYBCO film through MOD approach is one of the most cost effective methods for long length CC fabrications. Although, this process has shown success on films below 1 micron, thicker films with the performance goal of 500-1000 A/cm have not been demonstrated even on small samples. Hence, long length thicker films of 1-3 micron through MOD approach with pinning center enhancement are yet to be fully developed to attain higher Ic and Je. High-density nanoscale pinning centers is the only way to keep Jc from dramatic degradation for thick films. In Phase I the feasibility of Ic>286A/cm and Jc>2.4 MA/cm2 for 1.2 micron YBCO films has been demonstrated. In Phase II, we propose to further increase the Ic limit and scale-up thicker film fabrication process. The major tasks will include: (1) optimization of MOD process steps on short lengths of RABiTS, IBAD and ISD substrates with appropriate buffers for thicker YBCO films (>2 micron) with high density nano pinning centers, and (2) scale-up of the optimized process to longer (>1 meter) tapes. UES has teamed up with Oxford Instruments for RABiTS and Los Alamos National Laboratory for IBAD substrates for the Phase II research.
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