Long-Life, High-Performance, Cost-Effective Refractory Metal Bore Surface Treatments for Gun Barrels and Missile Launch Tubes
Department of Defense
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12173 Montague Street, Pacoima, CA, 91331
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AbstractNot Available A low cost, high performance, 1300nm VCSEL will be a very desirable device for telecommunications as well as data communications applications. However, there is no low cost process for manufacturing of the 1300 or 1550nm devices at present because of the smaller refractive index difference between the InP/InGaAsP material systems compared to the GaAs/AlGaAs systems at shorter wavelengths. Princeton Electronic Systems, in collaboration with University of Michigan proposes to develop a low cost fabrication technology for 1300nm VCSELs using patterned growth approach which has been extremely successful for 1550nm devices. The VCSEL structure can be grown on patterned GaAs substrate, with no regrowth or multi-wafer growth/bonding process. The wide-band GaAs/AlxGaAs-oxide DBR mirror will reduce the growth time by 3-5 times. It will be possible to fabricate multi-wavelength emitters from a single wafer growth by simply controlling the mesa dimension. In phase I of this SBIR, we propose to design the VCSEL structure, grow the wafers by MBE, and fabricate the VCSEL devices. The devices will be tested for their performance including the high speed performance. We will demonstrate the feasibility of the devices in phase I and perfect them in phase II. We want to manufacture the devices in phase III.
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