Development of an Advanced High Yield Cost Effective SiC Process Technology for Manufacturing a New Class of SiC Power Devices

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$150,000.00
Award Year:
2001
Program:
SBIR
Phase:
Phase II
Contract:
DAAH0101CR200
Agency Tracking Number:
00SB1-0259
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
UNITED SILICON CARBIDE, INC.
100 Jersey Ave., New Brunswick, NJ, 08901
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
042068101
Principal Investigator:
Maurice Weiner
Vice President
(732) 565-9500
uscweiner@yahoo.com
Business Contact:
Maurice Weiner
Vice President
(732) 565-9500
uscweiner@yahoo.com
Research Institution:
n/a
Abstract
We propose to improve and fully develop the innovative cost-effective SiC process technology demonstrated in Phase I to fabricate and commercialize a novel SiC vertical JFET (VJFET) whose feasibility has been firmly demonstrated in Phase I. The innovativeprocess technology and the novel SiC VJFET device structure will make it possible (I) to reduce the high power dissipation of SiC devices from the order of 1E3 W/sq.cm to less than 200W/sq.cm, (II) to dramatically improve SiC power device reliability whenoperating at high temperatures, (III) to allow SiC power switches be fabricated for operations at temperatures of 300 C and above, (IV) to manufacture SiC power VJFET switches, and (V) to reduce the costs of the SiC power devices due to the greatlyimproved process yield. In Phase II we will optimize the device structure by computer modeling, fully develop the process technology to fabricate VJFETs with 50% reduction in cell size, and drastically increase the power level of SiC VJFETs for hightemperature (250-300C), high frequency (30-50Hz) and high power (35-45 HP) SiC inverter demonstration.

* information listed above is at the time of submission.

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