Design and Fabrication of an Advanced SiC SIT for High Power Transmitter
Department of Defense
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Small Business Information
United Silicon Carbide, Inc.
New Brunswick Technology Cente, 100 Jersey Ave. Bu, New Brunswick, NJ, 08901
Socially and Economically Disadvantaged:
AbstractWe propose to fully develop the innovative static induction transistor based on our successful feasibility demonstration performed in Phase I. The innovative process technology and the novel SIT design will make it possible (i) to achieve normally-off RFSITs, (ii) to substantially improve RF SIT's output power stability, (iii) to drastically increase the single chip SIT power density and power output, and (iv) to allow the SIT to operate at much higher temperatures with minimum concerns on thermallimitations. In Phase II, we propose to carry out the major research and development of the novel normally-off SITs, with efforts focused on experimental fabrications, packaging and characterization. A systematic study is planned to fully develop the novelSIT in terms of its power density, output signal stability, frequency performance, and temperature capability. Computer modeling will also be performed to further guiding the structure optimization. Processing technology will be further developed andoptimized. Our target is to have prototype normally-off SITs capable of high power and high temperature operations in the highly desired normally-off mode by the end of Phase II. In the privately funded Phase III, we plan to conduct commercializationdevelopment and have limited amount of high power RF SITs commercially available by the end of the first year of Phase III effort for prototype system demonstration.
* information listed above is at the time of submission.