Design and Fabrication of a Novel SiC Power Device
Department of Defense
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Small Business Information
UNITED SILICON CARBIDE, INC.
100 Jersey Ave. Building D, New Brunswick, NJ, 08901
Socially and Economically Disadvantaged:
AbstractWe propose to design, fabricate, and commercialize a novel SiC power device for high temperature and high power applications. The proposed device does not reply on a future solution to the problem of gate dielectric reliability at high temperature andelectric field. Successful demonstration of the proposed device would rapidly accelerate the development and pratical applications of SiC power devices in harsh environment. In Phase I, we plan to carry out a detailed computer modeling and experimentalstudy (i) to show the expected performance advantages of the proposed SiC power switch over the existing SiC devices, (ii) to simulate both DC and AC performances at temperatures up to 250 C, (iii) to quantify a structure for experimental demonstration,(iv) to experimentally fabricate the proposed power switch, and (v) to fully characterize the device performance. In Phase II, we will further develop the required processing technologies to fabricate improved versions of the proposed device based onimproved design and modeling. We will reduce the ON-state voltage drop, increase the blocking voltage, substantially improve the current capability, and clear show the advantages of the proposed SiC power switch over the existing SiC switches.Hightemperature SiC power switches for ground and sea vehicles, for actuator controllers and power supplies in air platforms, space platforms and weapons systems with extensive commercial applications in traction drives in electric and hybrid electricvehicles, industrial motor drives, power converters, power supplies and appliances.
* information listed above is at the time of submission.