Advanced High Current and Voltage SiC Diodes for Power Switching

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-04-C-0157
Agency Tracking Number: O022-0042
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2004
Solitcitation Year: 2002
Solitcitation Topic Code: OSD02-EP02
Solitcitation Number: 2002.2
Small Business Information
UNITED SILICON CARBIDE, INC.
New Brunswick Technology Center 100 Jersey Ave.Bu, New Brunswick, NJ, 08901
Duns: 042068101
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Petre Alexandrov
 Senior Research Engineer
 (732) 565-9500
 uscalexandrov@unitedsic.com
Business Contact
 Maurice Weiner
Title: Vice President
Phone: (732) 565-9500
Email: uscweiner@unitedsic.com
Research Institution
N/A
Abstract
We propose to design, fabricate and develop an advanced SiC diode that can lead to (i) substantially reduced volume and weight of power systems, (ii) greatly expanded operating temperature range, and (iii) drastically improved power efficiency and enhanced radiation tolerance. We propose to compare and optimize different designs of the proposed SiC power diodes. We propose to fully develop the critical processing technology to fabricate optimum performing devices. In comparison to the excellent results achieved in Phase I, we propose to further reduce the reverse leakage current density by 1000X, increase the forward current density by 100%, and increase the diode cell size by 10X. Multiple batches of the diodes will be fabricated to systematically improve the device performance with increasing power level. The final target is to achieve power level up to 500kW. Systematic characterization and mapping will be done and operation into avalanche mode will be use to qualify the edge termination technology. We propose to dice and package the diodes suitable for up to 250C operations. Half-bridge inverter testing will be done to determine the AC characteristics and the diode stress handling capability. Reliability issue will be investigated and approaches to improve device lifetime will be identified.

* information listed above is at the time of submission.

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