A Novel Approach to High Power Density Packaging for High Temperature SiC Power Modules

Award Information
Agency:
Department of Defense
Branch:
Army
Amount:
$730,000.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
W56HZV-04-C-0448
Agency Tracking Number:
A022-0222
Solicitation Year:
2002
Solicitation Topic Code:
A02-232
Solicitation Number:
2002.2
Small Business Information
UNITED SILICON CARBIDE, INC.
New Brunswick Technology Center, New Brunswick, NJ, 08901
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
014586911
Principal Investigator
 Leonid Fursin
 Senior Research Engineer
 (732) 565-9500
 uscfursin@unitedsic.com
Business Contact
 George Lin
Title: Vice President
Phone: (732) 565-9500
Email: uscglin@unitedsic.com
Research Institution
N/A
Abstract
In response to Army SBIR Topic No. A02-232, we propose to develop a novel approach to package high power density SiC devices for high temperature operations. The proposed approach is aimed at achieving (i) substantially higher heat rejection, (ii) drastically simplified packaging technology, (iii) greatly improved reliability for high temperature operations, and (iv) low cost so that it cab find numerous dual-use applications. In Phase I, we clearly demonstrated the feasibility of the approach. In Phase II, we propose to substantially improve the technology, including further increased heat rejection, higher ambient operating temperatures, and increased voltage and power ratings. These substantial improvements to the technology will be achieved through the design, fabrication and demonstration of a series of packaged SiC power rectifiers and switches suitable for high temperature operations. Computer modeling will be carried out to assist the design of the key components. The fabricated key component will be characterized and tested under different temperatures. The packages developed under Phase II will be capable of handling power dissipations up to a factor of 10X better than state-of-the-art and suitable for operations at ambient temperatures up to 200C or higher. Because of the simplicity and low cost of the proposed packaging technology, if demonstrated successfully, it should also find widespread applications for Si power devices.

* information listed above is at the time of submission.

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