A highly manufacturable technology for radiation-hardened and high-temperature system applications

Award Information
Agency:
Department of Defense
Amount:
$100,000.00
Program:
SBIR
Contract:
FA8650-04-M-2464
Solitcitation Year:
2004
Solicitation Number:
2004.1
Branch:
Missile Defense Agency
Award Year:
2004
Phase:
Phase I
Agency Tracking Number:
B041-036-0118
Solicitation Topic Code:
MDA04-036
Small Business Information
UNITED SILICON CARBIDE, INC.
New Brunswick Tech Center, 100 Jersey Ave.Bldg A, New Brunswick, NJ, 08901
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
042068101
Principal Investigator
 Leonid Fursin
 Senior Research Engineer
 (732) 565-9500
 uscfursin@unitedsic.com
Business Contact
 Maurice Weiner
Title: VP for R&D
Phone: (732) 565-9500
Email: uscweiner@unitedsic.com
Research Institution
N/A
Abstract
This SBIR Phase I project is proposed to develop a highly manufacturable technology for radiation-hardened high-temperature SiC devices for both military and commercial applications. The innovative design in device structure and in processing of the proposed SiC power device will make it possible to offer the ultimate high radiation tolerance. The SiC device will also overcome the bottleneck problems of low inversion layer carrier mobility and low gate oxide reliability problems of SiC power MOSFETs under high temperature. In Phase I, efforts are proposed to develop the manufacturing technology through experimental demonstration of the proposed SiC device. Commercially available SiC wafers will be used to demonstrate the devices with aggressive voltage and current targets. Computer modeling will be done to extract key parameters to guide efforts for further device improvements. Preliminary radiation and high-temperature study will also be performed to investigate the radiation and high-temperature effects on the SiC device performance. The fabricated SiC devices will be delivered for system prototyping for rad-hard and high temperature applications. In Phase II, the rad-hard manufacturing technology will be fully developed and SiC devices with substantially increased power level will be delivered for insertion into MDA systems and subsystems.

* information listed above is at the time of submission.

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