High Temperature, High Power Density Electronic Devices

Award Information
Agency:
Department of Defense
Amount:
$70,000.00
Program:
SBIR
Contract:
N65538-04-M-0145
Solitcitation Year:
2004
Solicitation Number:
2004.1
Branch:
Navy
Award Year:
2004
Phase:
Phase I
Agency Tracking Number:
N041-095-0140
Solicitation Topic Code:
N04-095
Small Business Information
UNITED SILICON CARBIDE, INC.
New Brunswick Tech Center, 100 Jersey Ave.Bldg A, New Brunswick, NJ, 08901
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
042068101
Principal Investigator
 Xueqing Li
 Senior Research Engineer
 (732) 565-9500
 unitedsic@unitedsic.com
Business Contact
 Maurice Weiner
Title: VP for R&D
Phone: (732) 565-9500
Email: uscweiner@unitedsic.com
Research Institution
N/A
Abstract
This SBIR project is proposed to develop a high-temperature and high power density power system based on SiC power modules. The entire system will be designed to operate up to 120C ~ 150C ambient temperature without active cooling and the SiC power modules will be developed for operations at even higher temperature (up to 250C) in case of air-cooling failure. Phase I will be concentrated on (i) design of SiC power switches and modules, (ii) fabrication of SiC power modules, (iii) high-temperature packaging of SiC power modules, (iv) inverter characterization of SiC power modules at room temperature and up to 250C as well as investigating SiC power device failure mode (in case of failure), (v) design of SiC high power motor control system and simulation and modeling to confirm the proposed design. In Phase II, the designed system will be built completely and tested against goals established in Phase I. A plan will be developed based on Phase II results for the design and manufacturing of a shipboard power system in the privately funded Phase III of commercialization development.

* information listed above is at the time of submission.

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