High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-09-C-0150
Agency Tracking Number: B083-029-0365
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: MDA08-029
Solicitation Number: 2008.3
Small Business Information
New Brunswick Technology Center, 100 Jersey Ave.Building A, New Brunswick, NJ, 08901
DUNS: 042068101
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Leonid Fursin
 Sr. Research Engineer
 (732) 565-9500
 UnitedSiC@UnitedSiC.com
Business Contact
 Maurice Weiner
Title: Vice President
Phone: (732) 565-9500
Email: USCWeiner@UnitedSiC.com
Research Institution
N/A
Abstract
In response to SBIR topic MDA08-029, USCI proposes to develop a unique 4H-SiC super-junction lateral JFET (SL-JFET), based on a novel and simple design, to solve all of the remaining problems facing the development of 4H-SiC power switches for resonant high-frequency power converter in radar applications, including the problems of high output coupling capacitance of vertical SiC MOSFETs that lead to low resonant frequency and efficiency, low channel electron mobility that leads to a high specific resistance and hence low resonant switching frequency and efficiency,low gate oxide reliability under high-temperature and high electric field which lead to MOSFET gate threshold voltage drift, and a lack of reliable passivation for GaN power switches. In Phase I, we plan to design and optimize the device structure, simulate and predict the performance characteristics of the device, develop a circuit model for high frequency inverter simulations, design the layout and masks, develop the critical processing technologies needed for the device fabrication. In Phase II, we propose to fabricate multiple batches of the optimized device targeting the high-voltage and high-frequency required for the inverter, demonstrate high-frequency switching with packaged devices. We will focus on commercialization development under privately funded Phase II.

* Information listed above is at the time of submission. *

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