Heterojunction Bipolar Transistor Power Amplifiers for Long-Range X-band Communications

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNC06CB33C
Agency Tracking Number: 054306
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: S8.03
Solicitation Number: N/A
Solicitation Year: 2005
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-01-24
Award End Date (Contract End Date): 2006-07-24
Small Business Information
1275 W Roosevelt Rd, Ste 112, West Chicago, IL, 60185-4833
DUNS: 101351505
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Alan Sugg
 Principal Investigator
 (630) 562-9433
Business Contact
 Alan Sugg
Title: President
Phone: (630) 562-9433
Email: arsugg@vegawave.com
Research Institution
In this SBIR Phase I project, Vega Wave Systems, Inc. will develop and demonstrate a novel InGaP-GaAs heterojunction bipolar transistor power amplifier for long-range X-band communications. The Phase I objective is to design and fabricate a new type of heterojunction bipolar transistor in order to achieve high device performance for power amplifiers (PAs). In addition, monolithic power combiners suitable for combining the output power of several HBTs will be designed and simulated. The transistor design is expected to result in a new approach capable of achieving high performance in an inherently low-cost device process. Prototype InGaP heterojunction bipolar transistors that have been optimized for communications applications at X-band frequencies will be designed, fabricated and delivered in Phase I. The devices will be characterized and modeling parameters will be extracted from the characterization results. Preliminary power amplifier and power combiner designs will be evaluated using the models obtained for the transistors. In Phase II the technology will be optimized for performance and extended to higher levels of integration by combining the outputs of several power transistors to deliver a monolithically-integrated amplifier that can achieve power output levels in excess of 10 watts.

* Information listed above is at the time of submission. *

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