PRECURSORS FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION OF COMPOUND SEMICONDUCTORS

Award Information
Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Amount:
$50,000.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
10360
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Voltaix Inc
Po Box 5357 - 197 Meister Ave, North Branch, NJ, 08876
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 John P De Neufville
 (201) 231-9060
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE CHEMICAL VAPOR DEPOSITION OF COMPOUND SEMICONDUCTORS REQUIRES VOLATILE PRECURSOR MOLECULES, USUALLY ORGANOMETALLIC (OM) LIQUIDS OR METAL HYDRIDE (MH) GASES, WHICH CAN BE THERMALLY DECOMPOSED ON A HEATED SUBSTRATE TO PRODUCE THE REQUISITE EPITAXIAL MATERIAL GROWTH. AN INHERENT DISADVANTAGE WITH THE OM'S IS THAT THEIR DECOMPOSITION PRODUCES HYDROCARBON SPECIES WHICH CAN CONTRIBUTE CARBON IMPURITIES TO THE GROWING CRYSTAL. AN INHERENT DISADVANTAGE OF THE MH GASES IS THE DIFFICULTY OF STORING AND HANDLING TOXIC AND FLAMMABLE GASES SAFELY AT HIGH PRESSURES. FURTHERMORE, CERTAIN HYDRIDES ARE TOO UNSTABLE TO CONTEMPLATE STORAGE AS GASES AT AMBIENT TEMPERATURE, LEAVING NO APPARENT CHOICE EXCEPT THE OM OPTION. HOWEVER, WHERE THERE IS A CHOICE BETWEEN MH GASES AND OM LIQUIDS, THE MH'S (E.G. ASH[3], PH[3]) ARE STILL GENERALLY PREFERRED DUE TO THEIR HIGHER PURITY AND INHERENT ABSENCE OF CARBON CONTAMINANTS. POINT-OF-USE MH GAS GENERATORS ARE PROPOSED TO OVERCOME LIMITATIONS OF BOTH CLASSES OF CVD PRECURSORS. IN ADDITION TO THE OBVIOUS CASES OF ASH(3) AND PH(3) GENERATORS, THE POSSIBILITY OF GENERATING MORE UNUSUAL AND LESS STABLE HD'S LIKE H(2)TE AND GA(2)H(6) APPEARS FEASIBLE. DEVELOPMENT OF SUCH MH SOURCE WOULD EXPAND THE OPTIONS FOR MOCVD PRECURSORS FOR DEPOSITION OF HG/CDTE AND GAAS CRYSTALS. THE PHASE I OBJECTIVE IS TO EVALUATE ALTERNATIVE CHEMISTRIES FOR A POINT-OF-USE GENERATOR AND TO DETERMINE THE CONSTRAINTS INVOLVED IN GETTING A GAS STREAM CONTAINING H(2)TE INTO A CVD REACTOR WITHOUT PREMATURELY DECOMPOSING THE H(2)TE COMPONENT. THE CONTEMPLATED SOURCE CHEMISTRIES WOULD ALSO ELIMINATE THE STORAGE OF EXTREME TOXICS AT HIGH PRESSURE.

* information listed above is at the time of submission.

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