Revolutionary Photoreceivers Based on Combining Si-MOS Process with SiGe Nanotechnology

Award Information
Agency:
Department of Defense
Branch:
Air Force
Amount:
$99,999.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
FA8750-04-C-0152
Agency Tracking Number:
F041-214-1585
Solicitation Year:
2004
Solicitation Topic Code:
AF04-214
Solicitation Number:
2004.1
Small Business Information
VOXTEL, INC.
12725 SW Millikan Way, Suite 300, Beaverton, OR, 97005
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
124348652
Principal Investigator
 James Gates
 Senior Engineer
 (503) 906-7906
 georgew@voxtel-inc.com
Business Contact
 George Williams
Title: President
Phone: (503) 906-7906
Email: georgew@voxtel-inc.com
Research Institution
N/A
Abstract
Voxtel, Inc. proposes to optimize the design of a SiGe quantum dot (QD) detector capable of 1300nm and 1550nm response, with good responsivity at zero volt bias voltage, and with low dark current. The proposed SiGe quantum dot detectors makes it feasible to integrate long wavelength near infrared optoelectronic devices into CMOS chips, fabricated on commercial CMOS processes. Embedding SiGe nanostructures, i.e. very narrow films, islands and clusters, into heterostructures deposited on Si wafers open new routes for a variety of Si devices monolithic integration of opto-electronic on Si, and the proposed effort, by developing the low temperature growth processes necessary for commercial CMOS integration, characterizing the electrical and optical characteristics of the SiGe QDs, as well as stacked QD layers, and interfacing to Voxtel's existing high speed Si CMOS photoreceiver circuits makes significant strides to achieving the goals of low cost, silicon-compatible NIR photoreceivers.

* information listed above is at the time of submission.

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