Ultra-low Noise, High Bandwidth, 1550nm HgCdTe APD

Award Information
Agency:
National Aeronautics and Space Administration
Amount:
$70,000.00
Program:
SBIR
Contract:
NNG04CA94C
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
2004
Phase:
Phase I
Agency Tracking Number:
034977
Solicitation Topic Code:
N/A
Small Business Information
Voxtel, Inc.
614 SW 11th Avenue, Portland, OR, 97205
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
124348652
Principal Investigator
 James Gates
 Principal Investigator
 (503) 243-4633
 jimgates@voxtel-inc.com
Business Contact
 George Williams
Title: Business Official
Phone: (503) 243-4633
Email: georgew@voxtel-inc.com
Research Institution
N/A
Abstract
Voxtel Inc. proposes to optimize the design of a large area, 1.55?m sensitive HgCdTe avalanche photodiode (APD) that achieves high gain with nearly no excess noise. By optimizing the APD device structure and by exploiting the most recent insight into the material?s ionization characteristics, we have engineered the vertical HgCdTe APD for nearly noiseless gain (ultra low k) with high bandwidth and with low dark current. As large area photodetectors necessarily have high dark current and increased capacitance, we will tradeoff the performance of a large area detector design with that of a pixilated design. A pixilated detector can reduce the amplifier noise and dark current in the local of the amplified events to sufficiently low levels for photon counting. Through the use of our low noise, high unit cell density, amplifier integrated circuits, we will demonstrate nearly ideal receiver performance for space optical communications applications.

* information listed above is at the time of submission.

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