High Efficiency, Large-area, 1550 nm InGaAs Photodiodes
Small Business Information
12725 SW Millikan Way, Suite 230, Beaverton, OR, 97005
AbstractA stable, well characterized InGaAs materials growth and photodetector fabrication process will be used to fabricate matched photodiodes optimized for balanced homodyne detection. The 1-mm-diameter p-i-n photodetectors will be manufactured back-illuminated with a 5-micron absorber, allowing residual light to reflect off the front-side metal to make a double pass through the active layer. Ultra-high-purity InGaAs will be used so that the absorber can operate fully depleted at relatively low operating voltages (< -5 VDC). The ultra-pure InGaAs will also reduce variation across the 1-mm-diameter detector and prevent breakdown. Operating the detector fully depleted will decrease the carrier transport time and therefore reduce carrier recombination; it will also reduce the detectorÂ¿s capacitance. So that stray capacitance is minimized, the detectors will be bump-bonded directly to a sub-mount; the detector will then be integrated with low-noise transimpedance amplifiers and integrated with a three-stage thermoelectric cooler in a hermetic TO-5 package. The matched detectors will be testing and characterized in an optical homodyne detection system.
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