High Efficiency, Large-area, 1550 nm InGaAs Photodiodes

Award Information
Agency:
Department of Commerce
Branch
National Institute of Standards and Technology
Amount:
$89,998.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
09-105-5
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Voxtel, Inc.
12725 SW Millikan Way, Suite 230, Beaverton, OR, 97005
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Andrew Huntington
(971) 223-5646
andrew@voxtel-inc.com
Business Contact:
() -
Research Institution:
n/a
Abstract
A stable, well characterized InGaAs materials growth and photodetector fabrication process will be used to fabricate matched photodiodes optimized for balanced homodyne detection. The 1-mm-diameter p-i-n photodetectors will be manufactured back-illuminated with a 5-micron absorber, allowing residual light to reflect off the front-side metal to make a double pass through the active layer. Ultra-high-purity InGaAs will be used so that the absorber can operate fully depleted at relatively low operating voltages (< -5 VDC). The ultra-pure InGaAs will also reduce variation across the 1-mm-diameter detector and prevent breakdown. Operating the detector fully depleted will decrease the carrier transport time and therefore reduce carrier recombination; it will also reduce the detector¿s capacitance. So that stray capacitance is minimized, the detectors will be bump-bonded directly to a sub-mount; the detector will then be integrated with low-noise transimpedance amplifiers and integrated with a three-stage thermoelectric cooler in a hermetic TO-5 package. The matched detectors will be testing and characterized in an optical homodyne detection system.

* information listed above is at the time of submission.

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