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High Efficiency, Large-area, 1550 nm InGaAs Photodiodes

Award Information
Agency: Department of Commerce
Branch: National Institute of Standards and Technology
Contract: N/A
Agency Tracking Number: 09-105-5
Amount: $89,998.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2009
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
12725 SW Millikan Way, Suite 230, Beaverton, OR, 97005
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Andrew Huntington
 (971) 223-5646
 andrew@voxtel-inc.com
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A stable, well characterized InGaAs materials growth and photodetector fabrication process will be used to fabricate matched photodiodes optimized for balanced homodyne detection. The 1-mm-diameter p-i-n photodetectors will be manufactured back-illuminated with a 5-micron absorber, allowing residual light to reflect off the front-side metal to make a double pass through the active layer. Ultra-high-purity InGaAs will be used so that the absorber can operate fully depleted at relatively low operating voltages (< -5 VDC). The ultra-pure InGaAs will also reduce variation across the 1-mm-diameter detector and prevent breakdown. Operating the detector fully depleted will decrease the carrier transport time and therefore reduce carrier recombination; it will also reduce the detector¿s capacitance. So that stray capacitance is minimized, the detectors will be bump-bonded directly to a sub-mount; the detector will then be integrated with low-noise transimpedance amplifiers and integrated with a three-stage thermoelectric cooler in a hermetic TO-5 package. The matched detectors will be testing and characterized in an optical homodyne detection system.

* Information listed above is at the time of submission. *

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