LEC Growth of Bulk In(1-x)Ga(x)As

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 17998
Amount: $250,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
42 Lorraine Road, Westwood, MA, 02090
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Rowland Ware
 (617) 320-0291
Business Contact
Phone: () -
Research Institution
N/A
Abstract
This program will develop a method of growing bulk ternary compound semiconductors of uniform composition. The target material of In(1-x)Ga(x)As was chosen because of its immediate use in the growth and fabrication of very high speed HEMT devices. The method should be applicable to other ternary compounds, giving a new field of "substrate engineering" to complement the "bandgap engineering" at present applied by epitaxy. The availability of substrates lattice matched to active layers will reduce strain and improve performance in devices such as II-VI lasers, solar cells, and HBTs.

* Information listed above is at the time of submission. *

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