LEC Growth of Bulk In(1-x)Ga(x)As

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$250,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
17998
Agency Tracking Number:
17998
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
42 Lorraine Road, Westwood, MA, 02090
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Rowland Ware
(617) 320-0291
Business Contact:
() -
Research Institute:
n/a
Abstract
This program will develop a method of growing bulk ternary compound semiconductors of uniform composition. The target material of In(1-x)Ga(x)As was chosen because of its immediate use in the growth and fabrication of very high speed HEMT devices. The method should be applicable to other ternary compounds, giving a new field of "substrate engineering" to complement the "bandgap engineering" at present applied by epitaxy. The availability of substrates lattice matched to active layers will reduce strain and improve performance in devices such as II-VI lasers, solar cells, and HBTs.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government