Widetronix

Address

950 Danby Road
Suite 139
Ithaca, NY, 14850

http://www.widetronix.com

Information

DUNS: 139352947
# of Employees: 4

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. Radioisotope Power Source for Long-Lived Sensors and Communications

    Amount: $99,932.00

    Developments in ultra-low power computing are creating new opportunities for long-lived unattended sensors and network communications nodes. To achieve operational objectives, the DoD has realized tha ...

    SBIRPhase I2015Department of Defense
  2. High Energy Density, Long Life, Betavoltaic Power Cells for Pacemakers and other Implantable Devices

    Amount: $224,798.00

    DESCRIPTION provided by applicant Pacemakers are small devices that help control abnormal heart rhythms called arrhythmia which can lead to serious life threatening conditions including organ d ...

    SBIRPhase I2015Department of Health and Human Services
  3. Power Solutions for Integrated Anti-Tamper Technologies

    Amount: $499,995.00

    Widetronix is commercializing betavoltaic batteries that produce nA to uA"s of current continuously for 3 to 100 years. In addition to meeting desired AT operational lifetimes (>25 years), the ...

    SBIRPhase II2012Department of Defense
  4. Power Solutions for Integrated Anti-Tamper Technologies

    Amount: $999,978.00

    Widetronix is commercializing betavoltaic batteries that produce nA to uA’s of current continuously for 3 to 100 years. In addition to meeting desired AT operational lifetimes (>25 years), these con ...

    SBIRPhase II2010Missile Defense Agency Department of Defense
  5. Power Solutions for Integrated Anti-Tamper Technologies

    Amount: $99,991.00

    Widetronix proposes two enabling enhancements for antitamper (AT) applicaitons in data protection and equipment monitoring as specified by our industrial partner, Lockheed Martin. Widetronix will buil ...

    SBIRPhase I2009Missile Defense Agency Department of Defense
  6. SIC EPITAXIAL LAYERS FOR ULTRA-HIGH VOLTAGE BIPOLAR DEVICES

    Amount: $813,353.00

    This program is focused on growth of thick low doped Silicon Carbide epitaxial layers suitable for ultra-high voltage (10-15 kV) SiC bipolar power devices using improved epitaxial growth chemistries a ...

    STTRPhase II2005Navy Department of Defense
  7. SiC Epitaxial Growth by Halo-hydrocarbon Precursor Growth

    Amount: $96,413.00

    We propose to demonstrate the feasibility of high quality SiC epitaxial layer growth using low-temperature (1000 oC) Chemical Vapor Deposition (CVD) from chlorine containing carbon precursors. In this ...

    STTRPhase I2004Navy Department of Defense

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