Confinement of Threading Dislocations at the CdTe/Si Interface for Improved HgCdTe IR Sensors

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-06-C-0107
Agency Tracking Number: A064-021-0281
Amount: $99,960.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A06-T021
Solicitation Number: N/A
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-08-01
Award End Date (Contract End Date): 2007-01-28
Small Business Information
1300 Iroquois Avenue, Naperville, IL, 60563
DUNS: 838111383
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Hisham Abad
 (630) 357-3000
Business Contact
 Dennis Wisnosky
Title: CEO
Phone: (630) 357-3000
Research Institution
 Inder P Batra
 Department of Physics
Chicago, IL, 60607
 (312) 413-2789
 Nonprofit college or university
Stringent requirements on the performance of third generation HgCdTe infrared detectors demand the availability of affordable high quality substrates with very large areas. The large areas are needed both for the fabrication of single very large focal plane arrays (FPAs) (2048x2048) and to increase the yield of smaller size FBAs per wafer. The quality of commercial CdTe/Si technology, the best large-area composite substrate available for the epitaxial growth HgCdTe, has reached a plateau such that significant improvements using current growth techniques are doubtful. However, the growth of CdTe on Si/Si (and potentially on Ge/Si) twist-bonded substrates (TBS) promises to transform this technology to markedly higher quality levels. We propose the epitaxial growth of CdTe on Si/Si substrates by Molecular Beam Epitaxy (MBE) as a promising method to prepare CdTe layers. Such layers will have significantly reduced threading dislocation density at the CdTe surface than what is available today. The CdTe/Si substrates will then be used as composite substrates for the growth of large area HgCdTe epilayers. We further propose to identify the requirements and design a high vacuum wafer bonding system for the fabrication of Si/Si and Ge/Si twist bonding structures.

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