GROWTH OF GALLIUM ARSENIDE EPITAXIAL FILMS BY INDIRECT PLASMA ENHANCED LOW PRESSURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$189,446.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
9074
Agency Tracking Number:
9074
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Po Box 3129, Tempe, AZ, 85280
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
P K Sinha
(602) 730-5661
Business Contact:
() -
Research Institution:
n/a
Abstract
THIS PROPOSAL IS AIMED AT TESTING THE FEASIBILITY OF A NEW AND INNOVATIVE IDEA FOR THE PRODUCTION OF LAYERED SEMICONDUCTOR DEVICE STRUCTURES, SUCH AS GALLIUM ARSENIDE-GALLIUM ALUMINUM ARSENIDE. THE EPITAXIAL GROWTH WILL BE DONE BY THE PROCESS OF INDIRECT PLASMA ENHANCED LOW PRESSURE METAL ORGANIX CHEMICAL VAPOR DEPOSITION UNDER THE INFLUENCE OF A MAGNETIC FIELD APPLIED TO THE GROWING LAYER. IT IS EXPECTED THAT HIGH QUALITY LAYERS WITH UNIFORM PROPERTIES OVER A LARGE AREA CAN BE GROWN AT TEMPERATURES CONSIDERABLY LOWER THAN HAS BEEN POSSIBLE SO FAR. THE INDIRECT BREAKDOWN OF THE PLASMA WILL RESULT IN A SIGNIFICANT DECREASE IN THE DEFECT DENSITY OF THE GROWN LAYERS. THE APPLICATION OF THE MAGNETIC FIELD TO THE SUBSTRATE AND THE GROWING LAYER IS EXPECTED TO ENABLE THE GROWTH OF HIGHLY PERFECT CRYSTALLINE LAYERS AT CONSIDERABLY LOWER GROWTH TEMPERATURES THAN HAS BEEN POSSIBLE SO FAR.

* information listed above is at the time of submission.

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