Gain, Power, and Duty Enhancement for the Far-Infrared p-Ge Laser by Neturon Transmutation Doping

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG60-01-P-0043
Agency Tracking Number: 01-0327
Amount: $66,004.00
Phase: Phase I
Program: SBIR
Awards Year: 2001
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
ZAUBERTEK, INC.
12565 Research Parkway,, Suite 300, Orlando, FL, 32826
Duns: 010040553
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Elena Flitsiyan
 Principal Investigator
 (407) 230-5704
 zaubertk@concentric.net
Business Contact
 Janis Key
Title: General Manager
Phone: (407) 230-5704
Email: jkey17@cs.com
Research Institution
N/A
Abstract
This Small Business Innovation Research Program will realize substantial improvements in the p-Ge laser gain medium. Far-infrared lasers based on inter-sub-band transitions of holes in p-type Ge span the broad spectral range of 1-4 THz and are the onlysolid state lasers in that region. They hold promise for molecular spectroscopy, chemical sensing, secure free-space local-area communications in visually obscured environments, and inter-satellite telemetry. At present, p-Ge lasers are limited by lowgain, cryogenic operation, and low duty caused by overheating. Since the laser mechanism requires extremely uniform excitation current throughout the active crystal, gain in traditional melt-grown p-Ge crystals is far from optimum because ofacceptor-concentration inhomogeneity. To overcome this feature, neutron transmutation doping of pure Ge crystals is proposed. The products generated by neutron irradiation decay rapidly into stable isotopes, primarily 71 Ga, which is a usual acceptor forp-Ge lasercrystals. The highly homogeneous thermal neutron flux in nuclear reactors and low neutron-absorption cross section for natural Ge isotopes provide the highest possible uniformity for the resulting acceptor distribution. Small-signal gain will increase upto 10 times, allowing higher operating temperatures, reduced dimensions, and potentially continuous-wave operation.A far-infrared p-Ge laser, with gain enhanced by transmutation doping, has commercial potential for applications in molecular spectroscopy, chemical sensing, secure free-space local-area communications in visually obscured environments, and inter-satellitetelemetry.

* information listed above is at the time of submission.

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