ZnO UV Light Emitters on High Quality ZnO

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-05-C-0023
Agency Tracking Number: A043-068-3082
Amount: $120,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: A04-068
Solicitation Number: 2004.3
Small Business Information
910 Columbia Street, Brea, CA, 92821
DUNS: 134392054
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: Y
Principal Investigator
 Gene Cantwell
 Chief Scientist
 (714) 989-8881
Business Contact
 K. Choo
Title: Vice President
Phone: (714) 989-8802
Email: kchoo@znt.us
Research Institution
ZnO has many inherent advantages over current materials used to fabricate UV LEDs and lasers in that it is a more efficient light emitter, has better radiation hardness, and can easily be fabricated in bulk single crystals. Uniquely, this project will utilize the high purity, 2-inch diameter ZnO single crystals developed by ZN Technology as substrates on which to epitaxially grow ZnO pn junction LEDs using molecular beam epitaxy. The use of nanotips to increase the light output of the ZnO LED will also be investigated. In the option phase ZnMgO/ZnO heterostructures will be developed as a component of an LED with even higher efficiency. Also in the option phase, growth of LEDs and lasers on other orientations of single crystal ZnO substrates will be investigated as avenues for other devices and improved performance.

* Information listed above is at the time of submission. *

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