ZnO UV Light Emitters on High Quality ZnO

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$120,000.00
Award Year:
2005
Program:
SBIR
Phase:
Phase I
Contract:
W911NF-05-C-0023
Agency Tracking Number:
A043-068-3082
Solicitation Year:
2004
Solicitation Topic Code:
A04-068
Solicitation Number:
2004.3
Small Business Information
ZN TECHNOLOGY, INC.
910 Columbia Street, Brea, CA, 92821
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
Y
Duns:
134392054
Principal Investigator:
Gene Cantwell
Chief Scientist
(714) 989-8881
cantwell@znt.us
Business Contact:
K. Choo
Vice President
(714) 989-8802
kchoo@znt.us
Research Institution:
n/a
Abstract
ZnO has many inherent advantages over current materials used to fabricate UV LEDs and lasers in that it is a more efficient light emitter, has better radiation hardness, and can easily be fabricated in bulk single crystals. Uniquely, this project will utilize the high purity, 2-inch diameter ZnO single crystals developed by ZN Technology as substrates on which to epitaxially grow ZnO pn junction LEDs using molecular beam epitaxy. The use of nanotips to increase the light output of the ZnO LED will also be investigated. In the option phase ZnMgO/ZnO heterostructures will be developed as a component of an LED with even higher efficiency. Also in the option phase, growth of LEDs and lasers on other orientations of single crystal ZnO substrates will be investigated as avenues for other devices and improved performance.

* information listed above is at the time of submission.

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