Amethyst Research, Inc.

Company Information

Company Name
Amethyst Research, Inc.
Address
123 Case Circle
Ardmore, OK, 73401-0643
Phone
1 405-227-9414
URL
http://www.amethystresearch.com
DUNS
159048698
Number of Employees
14

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,187,310.00
10
SBIR Phase II
$4,228,181.00
5
STTR Phase I
$1,274,211.00
12
STTR Phase II
$999,999.00
1
Chart code to be here

Award List

  1. Epitaxially Passivated, Near-Planar Technology for Strained Layer Superlattice Mid- and Long-wave Focal Plane Arrays

    Amount: $69,772.00

    The InAs/InGaSb Strained Layer Superlattice (SLS) system is developing rapidly and is now finally poised to seriously challenge HgCdTe as the dominant technology for mid- and long-wave detection. SLS ...

    SBIR Phase I 2010 ArmyDepartment of Defense
  2. SBIR Phase I: Advanced Infrared Imagers Constructed of Lead-Salts

    Amount: $149,168.00

    This Small Business Innovation Research (SBIR) Phase I project will develop device structures for infrared sensor applications using lead chalcogenides. This system has reduced cooling requirements o ...

    SBIR Phase I 2010 National Science Foundation
  3. Passivation of Dislocation Defects by Hydrogenation for High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

    Amount: $119,531.00

    For reasons primarily related to a lack of a suitable lattice matched substrate and the need to integrate with Si ROIC's, there is a need for delivery of low defect density HgCdTe epilayers on Si. D ...

    SBIR Phase I 2005 ArmyDepartment of Defense
  4. Passivation of Dislocation Defects by Hydrogenation for High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

    Amount: $729,958.00

    Production of low cost, large format HgCdTe LWIR focal plane arrays (FPAs) requires delivery of low defect density HgCdTe epilayers on Si. Despite the significant lattice mismatch between Si and HgCdT ...

    SBIR Phase II 2005 ArmyDepartment of Defense
  5. SBIR Phase I: Selective Area Hydrogenation for High Performance Monolithic HgCdTe NIR Avalanche Photo Diode Arrays

    Amount: $99,963.00

    This Small Business Innovation Research (SBIR) Phase I project will develop a new passivation technique, derived from a recent discovery that semiconductors can be readily hydrogenated by simultaneous ...

    SBIR Phase I 2006 National Science Foundation
  6. Passivation Technologies for Improved Operability and Radiation Tolerance in VLWIR HgCdTe Focal Plane Arrays

    Amount: $99,894.00

    HgCdTe, with its high quantum efficiency, remains the material of choice for most high-performance infrared detector applications. By varying its alloy composition, HgCdTe can be used for short wavele ...

    SBIR Phase I 2007 Missile Defense AgencyDepartment of Defense
  7. Passivation Technologies for Improved Operability in HgCdTe Focal Plane Arrays

    Amount: $998,574.00

    High-performance infrared detectors are mission-critical components of each layer of the Ballistic Missile Defense System. MDA is investing heavily in technologies that enhance producibility/operabili ...

    SBIR Phase II 2008 Missile Defense AgencyDepartment of Defense
  8. Defect Mapping of Wafers for Increasing Yield and Operability of Infrared Focal Plane Arrays

    Amount: $99,647.00

    The yield and operability of high performance infrared detectors, particularly those based on HgCdTe, are severely compromised by materials defects. Recently, ARI has demonstrated during its UV hydro ...

    SBIR Phase I 2008 Missile Defense AgencyDepartment of Defense
  9. SBIR Phase II: Photon-Assisted Hydrogenation Process Technology for Manufacturability and Improved Operability of HgCdTe Infrared Detectors

    Amount: $499,901.00

    This Phase II Small Business Innovation Research project will deliver an innovative hydrogen passivation technique for improving manufacturability and performance of HgCdTe infrared detectors. Photon- ...

    SBIR Phase II 2007 National Science Foundation
  10. SBIR Phase I: Hydrogen Passivation of As-Grown Defects in CdZnTe for Improved Gamma Detection

    Amount: $99,336.00

    This SBIR Phase I research project is to improve the performance of CdZnTe based gamma ray detectors by passivating as grown defects through a hydrogenization process. These defects are a source of ...

    SBIR Phase I 2008 National Science Foundation

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government