AMETHYST RESEARCH INCORPORATED

Company Information
Address 123 CASE CIR
ARDMORE, OK, 73401-2100

http://www.amethystresearch.com

Information

DUNS: 159048698

# of Employees: 14


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. SBIR Phase I: Hydrogen Passivation of As-Grown Defects in CdZnTe for Improved Gamma Detection

    Amount: $99,336.00

    This SBIR Phase I research project is to improve the performance of CdZnTe based gamma ray detectors by passivating as grown defects through a hydrogenization process. These defects are a source of ...

    SBIRPhase I2008National Science Foundation
  2. Passivation Technologies for Improved Operability and Radiation Tolerance in VLWIR HgCdTe Focal Plane Arrays

    Amount: $99,894.00

    HgCdTe, with its high quantum efficiency, remains the material of choice for most high-performance infrared detector applications. By varying its alloy composition, HgCdTe can be used for short wavele ...

    SBIRPhase I2007Missile Defense Agency Department of Defense
  3. SBIR Phase II: Photon-Assisted Hydrogenation Process Technology for Manufacturability and Improved Operability of HgCdTe Infrared Detectors

    Amount: $499,901.00

    This Phase II Small Business Innovation Research project will deliver an innovative hydrogen passivation technique for improving manufacturability and performance of HgCdTe infrared detectors. Photon- ...

    SBIRPhase II2007National Science Foundation
  4. SBIR Phase I: Selective Area Hydrogenation for High Performance Monolithic HgCdTe NIR Avalanche Photo Diode Arrays

    Amount: $99,963.00

    This Small Business Innovation Research (SBIR) Phase I project will develop a new passivation technique, derived from a recent discovery that semiconductors can be readily hydrogenated by simultaneous ...

    SBIRPhase I2006National Science Foundation
  5. Passivation of Dislocation Defects by Hydrogenation for High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

    Amount: $119,531.00

    For reasons primarily related to a lack of a suitable lattice matched substrate and the need to integrate with Si ROIC's, there is a need for delivery of low defect density HgCdTe epilayers on Si. D ...

    SBIRPhase I2005Army Department of Defense
  6. Passivation of Dislocation Defects by Hydrogenation for High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

    Amount: $729,958.00

    Production of low cost, large format HgCdTe LWIR focal plane arrays (FPAs) requires delivery of low defect density HgCdTe epilayers on Si. Despite the significant lattice mismatch between Si and HgCdT ...

    SBIRPhase II2005Army Department of Defense

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