SBIR Phase II: Photon-Assisted Hydrogenation Process Technology for Manufacturability and Improved Operability of HgCdTe Infrared Detectors

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0724233
Agency Tracking Number: 0539316
Amount: $499,901.00
Phase: Phase II
Program: SBIR
Awards Year: 2007
Solicitation Year: 2005
Solicitation Topic Code: EL
Solicitation Number: NSF 05-557
Small Business Information
Amethyst Research Incorporated
720 North Commerce, Suite 345, Ardmore, OK, 73401
DUNS: 159048698
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: Y
Principal Investigator
 Ronald Hellmer
 (405) 227-9414
Business Contact
 Ronald Hellmer
Title: PhD
Phone: (405) 227-9414
Research Institution
This Phase II Small Business Innovation Research project will deliver an innovative hydrogen passivation technique for improving manufacturability and performance of HgCdTe infrared detectors. Photon-Assisted Hydrogenation (PAH) causes the substrate to be hydrogenated by simultaneous exposure to hydrogen gas and ultra-violet (UV) light which allows hydrogen to diffuse into and become a permanent part of the substrate. In Phase I the feasibility of PAH for the fabrication of high-performance near-infrared HgCdTe avalanche photodiode (APD) arrays on large-area silicon wafers was demonstrated. In Phase II PAH will be optimized for fabrication of HgCdTe infrared sensors from a variety of sources. The PAH process will not only create a new product line of high-performance HgCdTe/Si-based APDs, but may also provide a means to effect significantly higher yields, and thus lower costs for all manufacturers of HgCdTe-based detectors. PAH technology will enable all HgCdTe infrared device manufacturers to grow on Silicon wafers, significantly reducing the cost of these high value systems, and making them more generally available for a broad range of currently unaffordable applications, including civil transport, aviation, medical and robotic vision systems. Derivatives of the this technique may be applied to the manufacture of a variety of other optoelectronic semiconductor devices requiring passivation to mitigate defects.

* information listed above is at the time of submission.

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