INGAAS/INP ALGAAS/GAAS SUPERLATTICES OPTICAL WAVEGUIDE BY ION-INDUCED DISORDERING

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$49,942.00
Award Year:
1990
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
12419
Agency Tracking Number:
12419
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1885 Lundy Ave, San Jose, CA, 95131
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
S C Lin
(408) 432-6300
Business Contact:
() -
Research Institute:
n/a
Abstract
ION-INDUCED DISORDERING (IID) OF SUPERLATTICES AND MULTIPLE QUANTUM WELLS STRUCTURES IS GOING TO IMPACT ELECTRONICS, PHOTONICS, AND OEIC TECHNOLOGIES. IN THIS PROGRAM, E-TEK PROPOSES TO INVESTIGATE LOW LOSS IID ALGAAS/GAAS, INGAAS/INP OPTICAL WAVEGUIDES AT WAVELENGTHS OF 0.8UM, 1.3UM, AND 1.5UM. OUR PREVIOUS WORK HAS ESTABLISHED PROVEN TECHNOLOGIES IN ACHIEVING IID OF THESE STRUCTURES. IN THIS PHASE I R&D TASK, WAVEGUIDE CHARACTERISTICS SUCH AS PROPAGATION LOSS, MODE PROFILE, AND ACCESS LOSS DUE TO IID WILL BE EMPHASIZED. LOW LOSS IID WAVEGUIDE WILL BE INVESTIGATED USING THE TECHNIQUE OF RAPID THERMAL ANNEALING WHICH HAS BEEN PROVEN TO BRING BACK THE PHOTOLUMINESCENCE OF IMPLANTED SUPERLATTICE IN OUR PREVIOUS IID EXPERIMENTS. THE RESULTS OF PHASE I R&D CAN BE DIRECTLY APPLIED TO IID DIODE LASERS, IID WAVEGUIDE MODULATORS, IID OPTICAL SWITCHES, AND IID OEIC IN THE PHASE II TASK.

* information listed above is at the time of submission.

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