A NEW CONCEPT FOR ALLOYING THERMOELECTRIC MATERIALS IS PROPOSED IN WHICH THE ALLOY ADDITION WILL RESIDE IN THE LATTICE INTERSTITIALLY (I.

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$50,000.00
Award Year:
1986
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
3484
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Electro Technology Corp.
5656 Soledad Road, Lajolla, CA, 92037
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
NORBERT B. ELSNER
PRINCIPAL INVESTIGATOR
(619) 459-1016
Business Contact:
() -
Research Institution:
n/a
Abstract
A NEW CONCEPT FOR ALLOYING THERMOELECTRIC MATERIALS IS PROPOSED IN WHICH THE ALLOY ADDITION WILL RESIDE IN THE LATTICE INTERSTITIALLY (I.E., SOME OF THE NEW ATOMS WILL OCCUPY HOLES BETWEEN THE EXISTING ATOMS IN THE CRYSTAL LATTICE) AND REDUCE THERMAL CONDUCTIVITY VIA THE IMPAIRMENT OF PHONON FLOW. ALL ALLOYING OF THERMOELECTRIC MATERIALS TODATE HAS RELIED UPON SUBSTITUTIONAL ALLOYING. THIS NOVEL APPROACH TO THERMOELECTRIC MATERIALS DEVELOPMENT WILL INITIALLY BE APPLIED TO THE WELL-CHARACTERIZED 80 SI-20GE ALLOY TO UNDERSTAND THE ALLOYING PHENOMENA AND THE IMPROVEMENTS IN FIGURE OF MERIT THAT CAN BE MADE. SUBSEQUENT DEVELOPMENT WILL THEN BE ADDRESSED AT INTERSTITIAL ALLOYING OF THE SIGE AND GAP ALLOYS. IF THE PROPOSED METHOD PROVES SUCCESSFUL, IT SHOULD ALSO BE APPLICABLE TO OTHER THERMOELECTRIC ALLOY SYSTEMS.

* information listed above is at the time of submission.

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