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Sub-topic 1. NAND/NOR Chip Forensics

Award Information
Agency: Department of Homeland Security
Branch: N/A
Contract: D11PC20245
Agency Tracking Number: DHS SBIR-2011.2-H-SB011.2-003-0006-I
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: H-SB011.2-003
Solicitation Number: N/A
Solicitation Year: 2011
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-09-08
Award End Date (Contract End Date): 2012-11-30
Small Business Information
1000 Lake Street, Suite 203
Oak Park, IL 60301-1131
United States
DUNS: 026105078
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrew Hoog
Business Contact
 Chee-Young Kim
Research Institution

Mobile devices are increasingly utilized in criminal and terrorist activities. These devices are an important source of evidence to law enforcement
officers and forensic examiners. Since inception, viaForensics has developed innovative tools and techniques for officers and examiners leveraging the
latest technologies in mobile device forensics.
viaForensics has previously developed forensically sound tools and techniques for analyzing NAND flash memory in Android mobile devices, and is
uniquely positioned and prepared to extend this research. One of the primary challenges in forensic imaging of flash memory is that, unlike mechanical
hard disks, flash memory is in a constant state of flux. Memory management transactions are ongoing within the memory independent of external
activity. viaForensics proposes to continue its innovation by conducting research and development efforts toward creation of a NAND memory write
blocker, as well as tools and techniques for complete, bit-by-bit forensic imaging of NAND flash memory chips.
In Phase I, viaForensics will research expanding the existing tools and techniques to include the ability to decipher the wear leveling and other memory
management algorithms of NAND flash memory. The research will also include investigation and feasibility analysis of methods for implementing a
NAND memory write blocker.
In phase II, the tools and techniques will be further developed for use on a wider range of devices and flash memory types, and a prototype of the
NAND memory write blocker will be developed.

* Information listed above is at the time of submission. *

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