THz and Sub-THz MEMS-Fabricated Klystron Amplifier

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$749,999.00
Award Year:
2010
Program:
STTR
Phase:
Phase II
Contract:
W911NF-10-C-0116
Award Id:
n/a
Agency Tracking Number:
A2-4124
Solicitation Year:
2009
Solicitation Topic Code:
A09A-T016
Solicitation Number:
2009.A
Small Business Information
2900 South Main Street, Salt Lake City, UT, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
013017947
Principal Investigator:
Larry Sadwick
(801) 975-7399
sadwick@innosystech.com
Business Contact:
R. Hwu
CEO/President
(801) 975-7399
hwu@innosystech.com
Research Institution:
Purdue University
Deborah Horton
2540 Dole Street
Hall 402
Honolulu, HI, 96822-
(765) 496-2393
Nonprofit college or university
Abstract
InnoSys and Purdue University will continue to research and develop robust Phase I approaches for building, implementing and demonstrating a new class of terahertz (THz) vacuum electronic device (VED) power amplifiers and power sources at frequencies in the range of 0.3-3.0 THz (the THz regime) employing advanced micro electro mechanical system (MEMS) and vacuum technology and processes. There is significant interest in exploiting the THz regime, however, to date there is a lack of THz power sources to so with. The design, implementation and demonstration of this new class of microfabricated VEDs is the core of our response to this STTR program. More specifically, electron gun, radio frequency (RF) slow wave structures, collectors, and thermal management of the THz VED will be integrated and microfabricated with a combination of MEMS-fabrication processes, including photolithography, deep reactive ion etching, and wafer bonding with sub-micron alignment tolerances. For this STTR program, InnoSys in cooperation with its research institute partner, Purdue University, will address the lack of powerful, compact and tunable sources of terahertz radiation by combining comprehensive simulations with state-of the art MEMS fabrication and 3-dimensional integration to realize a new class of high power sub-THz and THz VED power amplifiers and sources.

* information listed above is at the time of submission.

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