Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CA66C
Agency Tracking Number: 095060
Amount: $599,999.00
Phase: Phase II
Program: SBIR
Awards Year: 2011
Solicitation Year: 2009
Solicitation Topic Code: S3.04
Solicitation Number: N/A
Small Business Information
AR, Fayetteville, AR, 72701-7175
DUNS: 121539790
HUBZone Owned: Y
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Bradley Reese
 Principal Investigator
 (479) 443-5759
 breese@apei.net
Business Contact
 Sharmila Mounce
Title: Business Official
Phone: (479) 443-5759
Email: smounce@apei.net
Research Institution
 Stub
Abstract
In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster, with target specifications of 80-160V input, 200-700V / 5A output, efficiency greater than 96%, and peak power density in excess of 2.5 kW/kg. The PPU under development utilizes SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to greater than 3 MRad with little to zero change in device performance.

* Information listed above is at the time of submission. *

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