Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$599,999.00
Award Year:
2011
Program:
SBIR
Phase:
Phase II
Contract:
NNX11CA66C
Award Id:
n/a
Agency Tracking Number:
095060
Solicitation Year:
2009
Solicitation Topic Code:
S3.04
Solicitation Number:
n/a
Small Business Information
AR, Fayetteville, AR, 72701-7175
Hubzone Owned:
Y
Minority Owned:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator:
Bradley Reese
Principal Investigator
(479) 443-5759
breese@apei.net
Business Contact:
Sharmila Mounce
Business Official
(479) 443-5759
smounce@apei.net
Research Institute:
Stub




Abstract
In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster, with target specifications of 80-160V input, 200-700V / 5A output, efficiency greater than 96%, and peak power density in excess of 2.5 kW/kg. The PPU under development utilizes SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to greater than 3 MRad with little to zero change in device performance.

* information listed above is at the time of submission.

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