Low-Noise, UV-to-SWIR Broadband Photodiodes for Large-Format Focal Plane Array Sensors

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$600,000.00
Award Year:
2011
Program:
SBIR
Phase:
Phase II
Contract:
NNX11CA91C
Agency Tracking Number:
094173
Solicitation Year:
2009
Solicitation Topic Code:
S1.05
Solicitation Number:
n/a
Small Business Information
Discovery Semiconductors, Inc.
NJ, Ewing, NJ, 08628-3200
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
824781769
Principal Investigator:
Abhay Joshi
Principal Investigator
(609) 434-1311
abhay@chipsat.com
Business Contact:
Abhay Joshi
President&CEO
(609) 434-1311
abhay@chipsat.com
Research Institution:
Stub




Abstract
Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level integration for hyper-spectral imaging. Also, the size of the InGaAs focal plane arrays is currently limited by the InP substrate area.We propose to develop a 640 x 512 UV-to-SWIR focal plane array sensor using GaAs substrate having following photodiode performance: (1) Cut-on Wavelength = 0.25 micron; (2) Cut-off Wavelength = 2.5 micron; (3) RoA>35 Ohm-cm^2 at 300K; and (4) Quantum Eficiency>30% in UV (0.25 to 0.4 micron),>80% in Visible (0.4 to 0.9 micron), and>70% in IR (0.9 to 2.5 micron) subbands.Based on P.I.'s experience on SCIAMACHY, this project will enable one image sensor for 8 spectroscopic channels currently orbiting on European Space Agency's ENVISAT.

* information listed above is at the time of submission.

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