GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$600,000.00
Award Year:
2011
Program:
SBIR
Phase:
Phase II
Contract:
NNX11CB12C
Award Id:
n/a
Agency Tracking Number:
094143
Solicitation Year:
2009
Solicitation Topic Code:
O1.07
Solicitation Number:
n/a
Small Business Information
MN, Minneapolis, MN, 55406-1575
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
832797158
Principal Investigator:
Jody Klaassen
Principal Investigator
(612) 612-1249
jklaassen@alum.mit.edu
Business Contact:
Jody Klaassen
Business Official
(612) 612-1249
jklaassen@alum.mit.edu
Research Institution:
Stub




Abstract
The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their optimal performance and reliability.Ka-band power transistors with>60% Power Added Efficiency (PAE) are not commercially available. The primary limitations to their manufacture are lack of mature process technology at major GaN foundries for sib-100nm lithography necessary for gate definition, and the difficulty of obtaining low dislocation density GaN templates in a suitable wafer size format (3-inch SiC and 6-inch Si) for mass production. Demonstration of Ka-band operation in the group III-nitrides has, to date, been primarily the realm of academic research labs. IIIAN's proposal bridges the gap between commercially available nitride foundry capabilities and pure research by utilizing proven process technology at RFMD for processes not requiring deep, submicron lithography and utilizing state-of-the-art nanofabrication technology available at the University of Minnesota's NanoFabrication Center.

* information listed above is at the time of submission.

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