GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CB12C
Agency Tracking Number: 094143
Amount: $600,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: O1.07
Solicitation Number: N/A
Solicitation Year: 2009
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-06-01
Award End Date (Contract End Date): 2013-05-31
Small Business Information
MN, Minneapolis, MN, 55406-1575
DUNS: 832797158
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jody Klaassen
 Principal Investigator
 (612) 612-1249
Business Contact
 Jody Klaassen
Title: Business Official
Phone: (612) 612-1249
Research Institution
The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their optimal performance and reliability.Ka-band power transistors with>60% Power Added Efficiency (PAE) are not commercially available. The primary limitations to their manufacture are lack of mature process technology at major GaN foundries for sib-100nm lithography necessary for gate definition, and the difficulty of obtaining low dislocation density GaN templates in a suitable wafer size format (3-inch SiC and 6-inch Si) for mass production. Demonstration of Ka-band operation in the group III-nitrides has, to date, been primarily the realm of academic research labs. IIIAN's proposal bridges the gap between commercially available nitride foundry capabilities and pure research by utilizing proven process technology at RFMD for processes not requiring deep, submicron lithography and utilizing state-of-the-art nanofabrication technology available at the University of Minnesota's NanoFabrication Center.

* Information listed above is at the time of submission. *

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