Inverted 3J Tandem Thermophotovoltaic Modules

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CE10P
Agency Tracking Number: 105684
Amount: $99,486.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solitcitation Year: 2010
Solitcitation Topic Code: S3.03
Solitcitation Number: N/A
Small Business Information
Spire Semiconductor, LLC
25 Sagamore Park Road, Hudson, NH, 03051-4901
Duns: 124267779
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Steven Wojtczuk
 Principal Investigator
 (603) 689-1204
Business Contact
 Edward Gagnon
Title: General Manager
Phone: (603) 689-1226
Research Institution
Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP wafers will be used for monolithically integrated module (MIM)compatibility and to achieve low free-carrier absorption. In Phase 1, we will design, epitaxially grow, and process large area single junction test cells for each of the three bandgaps proposed (to evaluate material quality), as well as for a full tandem cell structure. In Phase 2, we would further refine the structure and incorporate the material into MIM modules.

* information listed above is at the time of submission.

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