Inverted 3J Tandem Thermophotovoltaic Modules

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,486.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
NNX11CE10P
Agency Tracking Number:
105684
Solicitation Year:
2010
Solicitation Topic Code:
S3.03
Solicitation Number:
n/a
Small Business Information
Spire Semiconductor, LLC
25 Sagamore Park Road, Hudson, NH, 03051-4901
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
124267779
Principal Investigator:
Steven Wojtczuk
Principal Investigator
(603) 689-1204
swojtczuk@spiresemi.com
Business Contact:
Edward Gagnon
General Manager
(603) 689-1226
egagnon@spiresemi.com
Research Institution:
Stub




Abstract
Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP wafers will be used for monolithically integrated module (MIM)compatibility and to achieve low free-carrier absorption. In Phase 1, we will design, epitaxially grow, and process large area single junction test cells for each of the three bandgaps proposed (to evaluate material quality), as well as for a full tandem cell structure. In Phase 2, we would further refine the structure and incorporate the material into MIM modules.

* information listed above is at the time of submission.

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