Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$100,000.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
NNX11CE28P
Award Id:
n/a
Agency Tracking Number:
105314
Solicitation Year:
2010
Solicitation Topic Code:
S3.05
Solicitation Number:
n/a
Small Business Information
43670 Trade Center Place, Suite 155, Dulles, VA, -
Hubzone Owned:
N
Minority Owned:
Y
Woman Owned:
N
Duns:
148969137
Principal Investigator:
Siddarth Sundaresan
Principal Investigator
(703) 996-8200
sid@genesicsemi.com
Business Contact:
Satish Lulla
Business Official
(703) 996-8200
accounting@genesicsemi.com
Research Institute:
Stub




Abstract
Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500<SUP>o</SUP>C capable motor control power modules for direct integration with the exploration rovers required to operate in Venus-like environments. The Phase I of this proposed work will focus on the integrated MIDSJT device development and high-temperature packaging. Phase II will focus on the integration of the MIDSJT devices to construct full 3-Phase Inverter Motor Control Modules. Although SiC is the semiconductor material of choice for fabricating high-temperature (> 150<SUP>o</SUP>C) power electronics, existing SiC MOSFET and JFET based transistor device technologies perform poorly at temperatures exceeding 200<SUP>o</SUP>C. The proposed gate oxide-free Integrated MIDSJT device technology will overcome several problems associated with existing SiC device technologies by: (A) exhibiting desirable normally-OFF operation yet best-in-class on-state characteristics at temperatures as high as 500<SUP>o</SUP>C, (B) eliminating parasitic inductances/capacitances associated with interconnecting discrete devices, and (C) eliminating high-temperature gate oxide reliability issues. Special device designs and fabrication processes will be investigated in this work for reliable device operation at 500<SUP>o</SUP>C. Novel power device packaging techniques in the areas of power substrate, die-attach, chip metallization and wire bonds will be explored to demonstrate reliable module operation at 500<SUP>o</SUP>C after several thermal cycles.

* information listed above is at the time of submission.

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