Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CE28P
Agency Tracking Number: 105314
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solicitation Year: 2010
Solicitation Topic Code: S3.05
Solicitation Number: N/A
Small Business Information
43670 Trade Center Place, Suite 155, Dulles, VA, -
DUNS: 148969137
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Siddarth Sundaresan
 Principal Investigator
 (703) 996-8200
 sid@genesicsemi.com
Business Contact
 Satish Lulla
Title: Business Official
Phone: (703) 996-8200
Email: accounting@genesicsemi.com
Research Institution
 Stub
Abstract
Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500<SUP>o</SUP>C capable motor control power modules for direct integration with the exploration rovers required to operate in Venus-like environments. The Phase I of this proposed work will focus on the integrated MIDSJT device development and high-temperature packaging. Phase II will focus on the integration of the MIDSJT devices to construct full 3-Phase Inverter Motor Control Modules. Although SiC is the semiconductor material of choice for fabricating high-temperature (> 150<SUP>o</SUP>C) power electronics, existing SiC MOSFET and JFET based transistor device technologies perform poorly at temperatures exceeding 200<SUP>o</SUP>C. The proposed gate oxide-free Integrated MIDSJT device technology will overcome several problems associated with existing SiC device technologies by: (A) exhibiting desirable normally-OFF operation yet best-in-class on-state characteristics at temperatures as high as 500<SUP>o</SUP>C, (B) eliminating parasitic inductances/capacitances associated with interconnecting discrete devices, and (C) eliminating high-temperature gate oxide reliability issues. Special device designs and fabrication processes will be investigated in this work for reliable device operation at 500<SUP>o</SUP>C. Novel power device packaging techniques in the areas of power substrate, die-attach, chip metallization and wire bonds will be explored to demonstrate reliable module operation at 500<SUP>o</SUP>C after several thermal cycles.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government