Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CE28P
Agency Tracking Number: 105314
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solicitation Year: 2010
Solicitation Topic Code: S3.05
Solicitation Number: N/A
Small Business Information
GeneSiC Semiconductor Inc.
43670 Trade Center Place, Suite 155, Dulles, VA, -
DUNS: 148969137
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Siddarth Sundaresan
 Principal Investigator
 (703) 996-8200
Business Contact
 Satish Lulla
Title: Business Official
Phone: (703) 996-8200
Research Institution
Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500<SUP>o</SUP>C capable motor control power modules for direct integration with the exploration rovers required to operate in Venus-like environments. The Phase I of this proposed work will focus on the integrated MIDSJT device development and high-temperature packaging. Phase II will focus on the integration of the MIDSJT devices to construct full 3-Phase Inverter Motor Control Modules. Although SiC is the semiconductor material of choice for fabricating high-temperature (> 150<SUP>o</SUP>C) power electronics, existing SiC MOSFET and JFET based transistor device technologies perform poorly at temperatures exceeding 200<SUP>o</SUP>C. The proposed gate oxide-free Integrated MIDSJT device technology will overcome several problems associated with existing SiC device technologies by: (A) exhibiting desirable normally-OFF operation yet best-in-class on-state characteristics at temperatures as high as 500<SUP>o</SUP>C, (B) eliminating parasitic inductances/capacitances associated with interconnecting discrete devices, and (C) eliminating high-temperature gate oxide reliability issues. Special device designs and fabrication processes will be investigated in this work for reliable device operation at 500<SUP>o</SUP>C. Novel power device packaging techniques in the areas of power substrate, die-attach, chip metallization and wire bonds will be explored to demonstrate reliable module operation at 500<SUP>o</SUP>C after several thermal cycles.

* information listed above is at the time of submission.

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