Dry Epitaxial Lift-Off for High Efficiency Solar Cells

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CE60P
Agency Tracking Number: 104923
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solicitation Year: 2010
Solicitation Topic Code: X8.04
Solicitation Number: N/A
Small Business Information
OptiCOMP Networks
60 Phillips Street, 3-2, Attleboro, MA, 02703-6129
DUNS: 362175965
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 John Farah
 Principal Investigator
 (401) 616-4176
 johnfarah@hotmail.com
Business Contact
 John Farah
Title: Business Official
Phone: (401) 616-4176
Email: johnfarah@hotmail.com
Research Institution
 Stub
Abstract
A new method of transferring epitaxially grown active films onto an inexpensive polymeric flexible carrier. Specifically, for making thin lightweight high efficiency (> 30%) IMM3J solar cells while reusing the GaAs or Ge base wafer. This will reduce the costs of fabricating high efficiency PV cells by 30% and will raise specific power to > 200W/kg. The method uses a thin strained layer under the epitaxially grown active layers without ion implantation or wet etching. A crack propagates in the strained layer splitting the epi-layers from the base wafer after bonding to polyimide wafer, hence dry epitaxial lift-off (DELO), due to the difference in thermal expansion coefficients between the semiconductor and flexible substrate without applying mechanical pressure. The base wafer is re-used to grow new epi-layers.

* information listed above is at the time of submission.

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