Dry Epitaxial Lift-Off for High Efficiency Solar Cells

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$100,000.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
NNX11CE60P
Award Id:
n/a
Agency Tracking Number:
104923
Solicitation Year:
2010
Solicitation Topic Code:
X8.04
Solicitation Number:
n/a
Small Business Information
60 Phillips Street, 3-2, Attleboro, MA, 02703-6129
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
362175965
Principal Investigator:
John Farah
Principal Investigator
(401) 616-4176
johnfarah@hotmail.com
Business Contact:
John Farah
Business Official
(401) 616-4176
johnfarah@hotmail.com
Research Institution:
Stub




Abstract
A new method of transferring epitaxially grown active films onto an inexpensive polymeric flexible carrier. Specifically, for making thin lightweight high efficiency (> 30%) IMM3J solar cells while reusing the GaAs or Ge base wafer. This will reduce the costs of fabricating high efficiency PV cells by 30% and will raise specific power to > 200W/kg. The method uses a thin strained layer under the epitaxially grown active layers without ion implantation or wet etching. A crack propagates in the strained layer splitting the epi-layers from the base wafer after bonding to polyimide wafer, hence dry epitaxial lift-off (DELO), due to the difference in thermal expansion coefficients between the semiconductor and flexible substrate without applying mechanical pressure. The base wafer is re-used to grow new epi-layers.

* information listed above is at the time of submission.

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