High-Efficiency GaN-Based UV Imaging Photocathodes for Application in Harsh Environments
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7620 Executive Drive, Eden Prairie, MN, 55344-3677
AbstractThis proposal is directed toward the development of innovative high-efficiency UV photocathodes based on the wide bandgap III-nitride semiconductors for reliable operation at high temperature and high radiation environments for future NASA missions near the Sun and in deep atmospheres of Venus and Jupiter. The proposed work includes the incorporation of these photocathodes on Al2O3-based high-temperature micro-channel plates (MCPs) for high-sensitivity UV photon counting and imaging
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