Large-Area, UV-Optimized, Back-Illuminated Silicon Photomultiplier Arrays

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,998.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
NNX11CE81P
Award Id:
n/a
Agency Tracking Number:
104883
Solicitation Year:
2010
Solicitation Topic Code:
S1.05
Solicitation Number:
n/a
Small Business Information
15985 NW Schendel Avenue, Suite 200, Beaverton, OR, 97006-6703
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
124348652
Principal Investigator:
Vinit Dhulla
Principal Investigator
(971) 223-5646
vinitd@voxtel-inc.com
Business Contact:
Debra Ozuna
Business Official
(971) 223-5646
debrao@voxtel-inc.com
Research Institute:
Stub




Abstract
Existing photocathode-based technologies for visible and UV instruments lack sensitivity, are bulky, and have limited reliability. Solid-state silicon photomultipliers (SiPMs) are efficient, light, and reliable, but the front-illuminated designs demonstrated to date have poor UV response, limited sensitive area, and limited optical fill-factor. In the proposed program, back-illuminated, back-thinned SiPMs optimized for UV response and scalable tiling over very large areas will be developed for observation of air showers from ultra-high energy cosmic rays (JEM-EUSO) as well as for visible-wavelength spectrographic and photometric instruments planned for future telescopes (OWL). Short-wavelength light is absorbed near the surface of a silicon detector, and moving the optical entry surface to the back side of the wafer will enhance UV response by ensuring that all photocarriers from UV photons are generated on the correct side of the junction for efficient avalanche multiplication. Placing the optical entry surface on the back of the wafer will also improve optical fill factor because it will no longer be necessary to shine light through the quench resistor network on the front surface of the detector. Lastly, back-thinning the detector wafer will significantly reduce the mass per unit area of the focal plane array. In Phase I, SiPMs will be back-thinned to demonstrate enhanced UV response, and edge-buttable SiPM arrays that make optimal use of a standard 22-mm CMOS reticle will be designed. In Phase II, large-area back-illuminated SiPMs will be fabricated and demonstrated.Voxtel anticipates that its technology will enter the program at TRL=3, finish Phase I at TRL=5 or 6 (goal), and exit the Phase II program at TRL=7.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government