CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,998.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
NNX11CF18P
Agency Tracking Number:
104373
Solicitation Year:
2010
Solicitation Topic Code:
X6.02
Solicitation Number:
n/a
Small Business Information
SJT Micropower
AZ, Fountain Hills, AZ, 85268-1515
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
185307266
Principal Investigator:
William Lepkowski
Principal Investigator
(480) 816-8077
w.lepkowski@sjtmicropower.com
Business Contact:
Trevor Thornton
Business Official
(480) 510-0229
t.thornton@sjtmicropower.com
Research Institution:
Stub




Abstract
We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is fully CMOS-compatible and can be integrated alongside conventional MOSFETs with no changes to the process flow. Unlike the MOSFETs however, the MESFETs do not require a fragile metal-oxide-semiconductor (MOS) interface and are extremely robust. With breakdown voltages in the range 10-50V the MESFET operating voltage greatly exceeds that of the accompanying CMOS. The combination of CMOS compatibility with high breakdown voltage allows for integrated DC-to-DC power conversion solutions that would otherwise require discrete components based on laterally diffused metal-oxide-semiconductor (LDMOS) devices. The MESFETs are intrinsically radiation tolerant up to 1 Mrad(Si) and have been demonstrated to work over the temperature range -196C to +150C. The Phase 1 R & D we are proposing will characterize the large signal switching performance of the SOI MESFETs for buck converter applications in extreme environments.

* information listed above is at the time of submission.

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